Recent advances in III-V nitride electron devices

We review the performance and discuss the potential of GaN-based field effect transistors for high-power, high-temperature operation. Recent Monte Carlo simulations predict that GaN-based transistors operating at high voltages may outperform GaAs-based transistors even at room temperature. Our GaN/A...

Full description

Saved in:
Bibliographic Details
Main Authors: Khan, M.A., Chen, Q., Yang, J., Anwar, M.Z., Blasingame, M., Shur, M.S., Burm, J., Eastman, L.F.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Cutoff frequency
Electron devices
FETs
Gallium nitride
HEMTs
III-V semiconductor materials
Temperature
Transistors
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We review the performance and discuss the potential of GaN-based field effect transistors for high-power, high-temperature operation. Recent Monte Carlo simulations predict that GaN-based transistors operating at high voltages may outperform GaAs-based transistors even at room temperature. Our GaN/AlGaN doped channel HFETs (DC-HFETs) demonstrated highest frequency operation among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel, with maximum frequency of oscillations above 100 GHz and cutoff frequency over 40 GHz.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1996.553114