Distortion analysis of GaAs MESFETs based on physical model using PISCES-HB

Distortion simulations of GaAs MESFETs based on a physical model and applying the harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained...

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Bibliographic Details
Main Authors: Sato-Iwanaga, J., Fujimoto, K., Masato, H., Ota, Y., Inoue, K., Troyanovsky, B., Yu, Z., Dutton, R.W.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Circuit simulation
Feedback circuits
Frequency domain analysis
Gallium arsenide
Harmonic distortion
Inductors
MESFET circuits
MESFET integrated circuits
Radio frequency
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Summary:Distortion simulations of GaAs MESFETs based on a physical model and applying the harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained between simulation and measurements for harmonic distortion and two-tone intermodulation distortion characteristics.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1996.553146