Characterization of oxide traps by RTN measurement in MOSFETs and memory devices

Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new met...

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Bibliographic Details
Main Authors: Shin, H, Byoungchan Oh
Format: Conference Proceeding
Language:English
Subjects:
Electric variables measurement
Energy states
Equations
MOSFETs
Nanoscale devices
Noise measurement
Semiconductor device noise
Telegraphy
Threshold voltage
Voltage fluctuations
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Summary:Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new method for extracting both locations (x T , y T ) and energy level (E Cox - E T ) of oxide traps.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2010.5531998