Modal gain reduction due to barrier state carriers in quantum well lasers

We describe changes in modal gain resulting from effects related to barrier state electrons in InGaAs-GaAs quantum well lasers operating near 980 nm. Electrical and optical excitations can lead to extreme changes in the modal gain-loss balance due to changes in absorption and optical confinement.

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Bibliographic Details
Main Authors: Finzi, D., Mikhaelashvili, V., Tessler, N., Eisenstein, G.
Format: Conference Proceeding
Language:English
Subjects:
Carrier confinement
Charge carrier density
Electron optics
Laser excitation
Laser transitions
Optical bistability
Optical losses
Optical refraction
Optical variables control
Quantum well lasers
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Description
Summary:We describe changes in modal gain resulting from effects related to barrier state electrons in InGaAs-GaAs quantum well lasers operating near 980 nm. Electrical and optical excitations can lead to extreme changes in the modal gain-loss balance due to changes in absorption and optical confinement.
DOI:10.1109/ISLC.1996.553766