0.13μm CMOS/DMOS platform technology with novel 8V/9V LDMOS for low voltage high-frequency DC-DC converters

This paper presents a novel low voltage LDMOS structure with low on-resistance based on 0.13 μm CMOS technology. 8 V/9 V Nch LDMOS have only 0.3 μm gate length when the maximum gate operating voltage is 5 V, while the gate length of 5 V CMOS is 0.6 μm to avoid the short channel effect. The obtained...

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Bibliographic Details
Main Authors: Matsudai, Tomoko, Sato, Kumiko, Yasuhara, Norio, Saito, Hiroshi, Endo, Koichi, Takeuchi, Fumio, Yamamoto, Masaaki
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
CMOS technology
DC-DC power converters
Electric breakdown
Electrodes
Electrostatic discharge
Low voltage
Power integrated circuits
Power semiconductor devices
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Summary:This paper presents a novel low voltage LDMOS structure with low on-resistance based on 0.13 μm CMOS technology. 8 V/9 V Nch LDMOS have only 0.3 μm gate length when the maximum gate operating voltage is 5 V, while the gate length of 5 V CMOS is 0.6 μm to avoid the short channel effect. The obtained specific on-resistance are 1.8 mΩmm 2 (8 V Nch LDMOS) and 5.9 mΩmm 2 (8 V Pch LDMOS) respectively. Furthermore ESD protection structure for 8V LDMOS without any additional mask is also fabricated with large second breakdown trigger current It2 in spite of the same device size.
ISSN:1063-6854
1946-0201