Characteristic Enhancement of Solution-Processed In-Ga-Zn Oxide Thin-Film Transistors by Laser Annealing

We applied laser annealing on indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to improve their electrical characteristics. The IGZO nanoparticles were prepared from a water solution, and the films were fabricated by the spin-coating method and postbaked at a low postbake temperature (9...

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Bibliographic Details
Published in:IEEE electron device letters 2010-09, Vol.31 (9), p.969-971
Main Authors: Ya-Hui Yang, Yang, S S, Kan-Sen Chou
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Compound structure devices
Crystallinity
Diffraction
Electric variables
Electronics
Exact sciences and technology
Glass
Laser annealing
Laser beam annealing
Liquid crystal displays
metal-oxide-semiconductor devices
Nanoparticles
Optical pulses
Oxides
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Thin film transistors
thin-film transistors (TFTs)
Transistors
X-ray diffraction
X-ray lasers
X-rays
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Summary:We applied laser annealing on indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to improve their electrical characteristics. The IGZO nanoparticles were prepared from a water solution, and the films were fabricated by the spin-coating method and postbaked at a low postbake temperature (95°C). The crystallinity and compositions of the as-deposited film and the laser-annealed films were analyzed by X-ray diffraction. The film morphology and the electrical characteristics of TFTs at various irradiation dosages are also presented. Results show that the field-effect mobility can be improved to 7.65 cm 2 /V·s.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2055821