Gateless-FET undoped AlGaN/GaN HEMT structure for liquid-phase sensor

A gateless field-effect-transistor (FET) device fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure is investigated as a liquid-phase sensor. Good gate controllability for typical current-voltage (I-V) characteristics of FET is observed. This result shows that an undop...

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Bibliographic Details
Main Authors: Abidin, M S Z, Sharifabad, M E, Hashim, A M, Rahman, S F A, Rahman, A R A, Qindeel, R, Omar, N A, Aziz, A A, Hashim, M R, Mohamed, M H M
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Chemical sensors
Controllability
Electrostatics
FETs
Gallium nitride
HEMTs
Leakage current
Sensor phenomena and characterization
Voltage control
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Summary:A gateless field-effect-transistor (FET) device fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure is investigated as a liquid-phase sensor. Good gate controllability for typical current-voltage (I-V) characteristics of FET is observed. This result shows that an undoped-AlGaN surface at the open-gate area is effectively controlled by the isolated gate voltage via chemical solution. Stable pH sensing operation in aqueous solution is observed where this device exhibits a high linear sensitivity of 3.88 mA/mm/pH at drain-source voltage, V DS = 5 V. Due to the occurrence of large leakage current, the Nernstian's like sensitivity is not observed. It is also found that the device is sensitive to changes in electrostatic boundary conditions of the polar liquids. This indicates that the change in dipole moment in each liquid causes the potential change at AlGaN surface.
DOI:10.1109/SMELEC.2010.5549371