Characterization of contact module failure mechanisms for SOI technology using E-beam inspection and in-line TEM

Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspection is performed after the tungsten chemical mec...

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Bibliographic Details
Main Authors: Zhou, Xing J, Patterson, Oliver D, Woo-hyeong Lee, Kang, Hyoung H, Hahn, Roland
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Failure analysis
Grounding
Inspection
Logic gates
Monitoring
Random access memory
Online Access:Request full text
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Summary:Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspection is performed after the tungsten chemical mechanical planarization (W CMP) step. In-line transmission electron microscope (TEM) samples at select defect sites are then prepared and imaged to determine the failure mechanism. This methodology greatly enhances yield learning and provides quick feedback for lithography and etch process adjustments.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2010.5551467