Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays

Phase change memory (PCM) could potentially achieve high density with large, 3Dstacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed...

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Bibliographic Details
Main Authors: Gopalakrishnan, K, Shenoy, R S, Rettner, C T, Virwani, K, Bethune, D S, Shelby, R M, Burr, G W, Kellock, A, King, R S, Nguyen, K, Bowers, A N, Jurich, M, Jackson, B, Friz, A M, Topuria, T, Rice, P M, Kurdi, B N
Format: Conference Proceeding
Language:English
Subjects:
Access device
Copper
Current density
Diode
Electrodes
Ions
MIEC
Optimization
PCM
PCRAM
Phase change materials
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Summary:Phase change memory (PCM) could potentially achieve high density with large, 3Dstacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials[1, 2]. Experimental results on various device structures show that these ADs provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with
ISSN:0743-1562
DOI:10.1109/VLSIT.2010.5556229