Ambipolarity characterization of tunneling field-effect transistors

A new transistor parameter "ambipolarity factor (ν)" has been defined for SOI tunneling field-effect transistors (TFETs) and its usefulness has been discussed. The proposed ν indicates the severity of ambipolarity of TFETs quantitatively. Therefore, it is expected that ν will be helpful to...

Full description

Saved in:
Bibliographic Details
Main Authors: Jung-Shik Jang, Woo Young Choi
Format: Conference Proceeding
Language:English
Subjects:
Junctions
Leakage current
Logic gates
MOSFET circuits
Subthreshold current
Transistors
Tunneling
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new transistor parameter "ambipolarity factor (ν)" has been defined for SOI tunneling field-effect transistors (TFETs) and its usefulness has been discussed. The proposed ν indicates the severity of ambipolarity of TFETs quantitatively. Therefore, it is expected that ν will be helpful to suppressing OFF current for low-power consumption.
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2010.5562556