Improvement of junction characteristics of ultra shallow junction with boron-cluster implantation and Ni-silicide for nano-scale CMOS technology

In this paper, novel Ni silicide on boron cluster implanted source/drain junction is proposed and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide (Ni-Pd(5%)/TiN) is compared with pure Ni/TiN structure and the effect of boron cluster on the shallow junction of hi...

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Bibliographic Details
Main Authors: Hong-Sik Shin, Se-Kyung Oh, Min-Ho Kang, In-Shik Han, Hyuk-Min Kwon, Sang-Uk Park, Byung-Seok Park, Jung-Deuk Bok, Ga-Won Lee, Hi-Deok Lee
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Boron
Junctions
Nickel
Silicides
Thermal stability
Tin
Online Access:Request full text
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Summary:In this paper, novel Ni silicide on boron cluster implanted source/drain junction is proposed and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide (Ni-Pd(5%)/TiN) is compared with pure Ni/TiN structure and the effect of boron cluster on the shallow junction of high performance MOSFETs is characterized.
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2010.5562561