Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires

The present tight-binding study of rectangular SiNWs along [001], [110], and [111] revealed that the hole m* of [001] and [110] NWs on the {001} basal face has strong dependence on the width. Because this nature may make the design of devices difficult, these NWs are considered to be unfavorable for...

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Bibliographic Details
Main Authors: Moriokaa, N, Yoshioka, H, Suda, J, Kimoto, T
Format: Conference Proceeding
Language:English
Subjects:
Effective mass
Face
Nanowires
Periodic structures
Quantization
Shape
Silicon
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Summary:The present tight-binding study of rectangular SiNWs along [001], [110], and [111] revealed that the hole m* of [001] and [110] NWs on the {001} basal face has strong dependence on the width. Because this nature may make the design of devices difficult, these NWs are considered to be unfavorable for p-channel devices. In contrast, rectangular [111] NWs on both (112̅) and (1̅10) basal faces are favorable for p-channel devices because they have the smallest hole m* and its value is very resistant to the variability of the width.
ISSN:2161-4636
2161-4644
DOI:10.1109/SNW.2010.5562567