Accurate modeling of RF passive component in deep submicron process

An accurate and effective modeling method suitable for on-chip passive components fabricated in deep submicron process is presented. The proposed model adopts expandable-stage resonators to effectively capture the characteristic behaviors of parasitic interferences which generated owing to component...

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Bibliographic Details
Main Authors: Yu-Shun Tsai, Hung-Wen Chou, Yin-Chang Lin, Tzyy-Sheng Horng
Format: Conference Proceeding
Language:English
Subjects:
Accuracy
Computational modeling
Inductors
Integrated circuit modeling
Resonant frequency
Solid modeling
Spirals
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Summary:An accurate and effective modeling method suitable for on-chip passive components fabricated in deep submicron process is presented. The proposed model adopts expandable-stage resonators to effectively capture the characteristic behaviors of parasitic interferences which generated owing to component operating at higher frequency and distributed in the component itself and the substrate. As a result, it can model the actual operation characters of component accurately over the interesting frequency range. In order to extract the model efficient, a model extraction procedure with less computational resource cost is also presented. Finally, experiment at a 90 nm-process on-chip spiral inductor verifies the accuracy of proposed modeling method.
DOI:10.1109/AEM2C.2010.5578806