An In0.23Ga0.77As-based pHEMT-like planar Gunn diode operating at 116 GHz

An In 0.23 Ga 0.77 As-based planar Gunn diode operating in its fundamental transit-time mode of oscillation at 116 GHz with output power of -24 dBm is demonstrated. The diode has a pseudomorhpic HEMT-like structure grown on a semi-insulating GaAs substrate. The layer design was carried out using a t...

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Bibliographic Details
Main Authors: Li, C, Khalid, A, Lok, L B, Pilgrim, N J, Holland, M C, Dunn, G M, Cumming, D R S
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Electrical resistance measurement
Gallium arsenide
Oscillators
Semiconductor device measurement
Semiconductor process modeling
Substrates
Online Access:Request full text
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Summary:An In 0.23 Ga 0.77 As-based planar Gunn diode operating in its fundamental transit-time mode of oscillation at 116 GHz with output power of -24 dBm is demonstrated. The diode has a pseudomorhpic HEMT-like structure grown on a semi-insulating GaAs substrate. The layer design was carried out using a two-dimensional drift-diffusion model. The realized devices show considerable potential as a source of millimeter-wave and even terahertz radiation.
ISSN:2162-2027
DOI:10.1109/ICIMW.2010.5612507