Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics

This letter examines the turn-around effect of a threshold voltage (V th ) shift of an n-type transistor with atomic-layer-deposited HfO x N y gate dielectrics under a positive gate bias. V th shifted to the positive voltage direction during the first second due to electron trapping at the preexisti...

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Bibliographic Details
Published in:IEEE electron device letters 2010-12, Vol.31 (12), p.1479-1481
Main Authors: Jung, Hyung-Suk, Rha, Sang-Ho, Kim, Hyo Kyeom, Kim, Jeong Hwan, Won, Seok-Jun, Lee, Joohwi, Lee, Sang Young, Hwang, Cheol Seong, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In
Format: Article
Language:English
Subjects:
Dielectrics
Electron traps
Hafnium oxynitride (\hbox{HfO}_{x}\hbox{N}_{y})
Logic gates
metal-oxide-semiconductor field-effect transistor (MOSFET)
MOSFET circuits
positive bias temperature instability (PBTI)
Stress
Temperature measurement
turn-around
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Summary:This letter examines the turn-around effect of a threshold voltage (V th ) shift of an n-type transistor with atomic-layer-deposited HfO x N y gate dielectrics under a positive gate bias. V th shifted to the positive voltage direction during the first second due to electron trapping at the preexisting trap sites in the gate dielectrics, which then shifted to the negative voltage direction. This turn-around effect was attributed to hole trapping originating from the generation of electron-hole pairs by the surface plasmon or impact ionization.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2078792