Tungsten oxide as a p-type window material in amorphous silicon solar cells

A p-type amorphous tungsten oxide (p-a-WO 3 ) film was prepared using a vacuum thermal evaporator with a WO 3 source. By replacing a 10 nm-thick p-type amorphous silicon carbide window layer of a pin-type amorphous silicon based solar cell with a 10 nm-thick p-a-WO 3 film, the short circuit current...

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Bibliographic Details
Main Authors: Liang Fang, Seung Jae Baik, Jeong Won Kim, Seung Hyup Yoo, Jin-Wan Jeon, Sang Jung Kang, Yoon Hak Kim, Koeng Su Lim
Format: Conference Proceeding
Language:English
Subjects:
Amorphous silicon
Optical films
Photovoltaic cells
Tungsten
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Summary:A p-type amorphous tungsten oxide (p-a-WO 3 ) film was prepared using a vacuum thermal evaporator with a WO 3 source. By replacing a 10 nm-thick p-type amorphous silicon carbide window layer of a pin-type amorphous silicon based solar cell with a 10 nm-thick p-a-WO 3 film, the short circuit current density increased from 12.75 to 13.83 mA/cm 2 . Although the open circuit voltage was limited to 0.65 V due to the smaller work function of the p-a-WO 3 , the a-Si based solar cell with the novel p-a-WO 3 window layer has shown a conversion efficiency of 6.05 %. Our research opens a new application field for thin film solar cells.
ISSN:0160-8371
DOI:10.1109/PVSC.2010.5614478