Low energy proton implantation techniques for coverglass irradiation qualification

It is demonstrated that the two hydrogen concentration profiles and the associated effects on solar cell coverglass degradation created at equivalent atomic fluences of 7.4×10 15 particles/cm 2 using 30 keV proton (H + ) and 60 keV diatomic hydrogen ion (H 2 + ) implantation on solar cell coverglass...

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Main Authors: Messenger, S R, Trautz, K, Walters, R J, Jones, G, Hall, J, Schuur, J
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Glass
Photovoltaic cells
Protons
Radiation effects
Silicon
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creator Messenger, S R
Trautz, K
Walters, R J
Jones, G
Hall, J
Schuur, J
description It is demonstrated that the two hydrogen concentration profiles and the associated effects on solar cell coverglass degradation created at equivalent atomic fluences of 7.4×10 15 particles/cm 2 using 30 keV proton (H + ) and 60 keV diatomic hydrogen ion (H 2 + ) implantation on solar cell coverglass material are nearly identical. Both Monte Carlo simulation and experimental results support this contention to the level of acceptable experimental error, thereby enabling coverglass radiation testing to be performed using the latter, more cost effective option.
doi_str_mv 10.1109/PVSC.2010.5614673
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5614673</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5614673</ieee_id><sourcerecordid>5614673</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-c2c6505807d6fdbcdcbdfef2b74802fcdea5585395cca53822ebd132296c3a4a3</originalsourceid><addsrcrecordid>eNpV0MtKw0AYBeARLRhrH0Dc5AVS_7lPlhK8QUDxti2TuehImqQzqdK3N9huXB0-OJzFQegCwxJjKK-e3l-qJYGJXGAmJD1Ci1IqzAhjXJWYHP8z8BOUARZQKCrxDGWKFYIBVuQUnaX0BUCACpyh57r_yV3n4scuH2I_9l0e1kOru1GPYcLozGcXNluXct_H3PTfU7XVKeUhRm3DvrXZ6jb4YP50jmZet8ktDjlHb7c3r9V9UT_ePVTXdRGw5GNhiBEcuAJphbeNsaax3nnSSKaAeGOd5lxxWnJjNKeKENdYTAkphaGaaTpHl_vd4JxbDTGsddytDvfQXw1aVzQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Low energy proton implantation techniques for coverglass irradiation qualification</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Messenger, S R ; Trautz, K ; Walters, R J ; Jones, G ; Hall, J ; Schuur, J</creator><creatorcontrib>Messenger, S R ; Trautz, K ; Walters, R J ; Jones, G ; Hall, J ; Schuur, J</creatorcontrib><description>It is demonstrated that the two hydrogen concentration profiles and the associated effects on solar cell coverglass degradation created at equivalent atomic fluences of 7.4×10 15 particles/cm 2 using 30 keV proton (H + ) and 60 keV diatomic hydrogen ion (H 2 + ) implantation on solar cell coverglass material are nearly identical. Both Monte Carlo simulation and experimental results support this contention to the level of acceptable experimental error, thereby enabling coverglass radiation testing to be performed using the latter, more cost effective option.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 9781424458905</identifier><identifier>ISBN: 1424458900</identifier><identifier>EISBN: 9781424458912</identifier><identifier>EISBN: 1424458927</identifier><identifier>EISBN: 1424458919</identifier><identifier>EISBN: 9781424458929</identifier><identifier>DOI: 10.1109/PVSC.2010.5614673</identifier><identifier>LCCN: 84-640182</identifier><language>eng</language><publisher>IEEE</publisher><subject>Degradation ; Glass ; Photovoltaic cells ; Protons ; Radiation effects ; Silicon</subject><ispartof>2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002578-002583</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5614673$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54536,54901,54913</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5614673$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Messenger, S R</creatorcontrib><creatorcontrib>Trautz, K</creatorcontrib><creatorcontrib>Walters, R J</creatorcontrib><creatorcontrib>Jones, G</creatorcontrib><creatorcontrib>Hall, J</creatorcontrib><creatorcontrib>Schuur, J</creatorcontrib><title>Low energy proton implantation techniques for coverglass irradiation qualification</title><title>2010 35th IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>It is demonstrated that the two hydrogen concentration profiles and the associated effects on solar cell coverglass degradation created at equivalent atomic fluences of 7.4×10 15 particles/cm 2 using 30 keV proton (H + ) and 60 keV diatomic hydrogen ion (H 2 + ) implantation on solar cell coverglass material are nearly identical. Both Monte Carlo simulation and experimental results support this contention to the level of acceptable experimental error, thereby enabling coverglass radiation testing to be performed using the latter, more cost effective option.</description><subject>Degradation</subject><subject>Glass</subject><subject>Photovoltaic cells</subject><subject>Protons</subject><subject>Radiation effects</subject><subject>Silicon</subject><issn>0160-8371</issn><isbn>9781424458905</isbn><isbn>1424458900</isbn><isbn>9781424458912</isbn><isbn>1424458927</isbn><isbn>1424458919</isbn><isbn>9781424458929</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpV0MtKw0AYBeARLRhrH0Dc5AVS_7lPlhK8QUDxti2TuehImqQzqdK3N9huXB0-OJzFQegCwxJjKK-e3l-qJYGJXGAmJD1Ci1IqzAhjXJWYHP8z8BOUARZQKCrxDGWKFYIBVuQUnaX0BUCACpyh57r_yV3n4scuH2I_9l0e1kOru1GPYcLozGcXNluXct_H3PTfU7XVKeUhRm3DvrXZ6jb4YP50jmZet8ktDjlHb7c3r9V9UT_ePVTXdRGw5GNhiBEcuAJphbeNsaax3nnSSKaAeGOd5lxxWnJjNKeKENdYTAkphaGaaTpHl_vd4JxbDTGsddytDvfQXw1aVzQ</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Messenger, S R</creator><creator>Trautz, K</creator><creator>Walters, R J</creator><creator>Jones, G</creator><creator>Hall, J</creator><creator>Schuur, J</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201006</creationdate><title>Low energy proton implantation techniques for coverglass irradiation qualification</title><author>Messenger, S R ; Trautz, K ; Walters, R J ; Jones, G ; Hall, J ; Schuur, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-c2c6505807d6fdbcdcbdfef2b74802fcdea5585395cca53822ebd132296c3a4a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Degradation</topic><topic>Glass</topic><topic>Photovoltaic cells</topic><topic>Protons</topic><topic>Radiation effects</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Messenger, S R</creatorcontrib><creatorcontrib>Trautz, K</creatorcontrib><creatorcontrib>Walters, R J</creatorcontrib><creatorcontrib>Jones, G</creatorcontrib><creatorcontrib>Hall, J</creatorcontrib><creatorcontrib>Schuur, J</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Messenger, S R</au><au>Trautz, K</au><au>Walters, R J</au><au>Jones, G</au><au>Hall, J</au><au>Schuur, J</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low energy proton implantation techniques for coverglass irradiation qualification</atitle><btitle>2010 35th IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2010-06</date><risdate>2010</risdate><spage>002578</spage><epage>002583</epage><pages>002578-002583</pages><issn>0160-8371</issn><isbn>9781424458905</isbn><isbn>1424458900</isbn><eisbn>9781424458912</eisbn><eisbn>1424458927</eisbn><eisbn>1424458919</eisbn><eisbn>9781424458929</eisbn><abstract>It is demonstrated that the two hydrogen concentration profiles and the associated effects on solar cell coverglass degradation created at equivalent atomic fluences of 7.4×10 15 particles/cm 2 using 30 keV proton (H + ) and 60 keV diatomic hydrogen ion (H 2 + ) implantation on solar cell coverglass material are nearly identical. Both Monte Carlo simulation and experimental results support this contention to the level of acceptable experimental error, thereby enabling coverglass radiation testing to be performed using the latter, more cost effective option.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2010.5614673</doi><tpages>6</tpages></addata></record>
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subjects Degradation
Glass
Photovoltaic cells
Protons
Radiation effects
Silicon
title Low energy proton implantation techniques for coverglass irradiation qualification
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T12%3A34%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Low%20energy%20proton%20implantation%20techniques%20for%20coverglass%20irradiation%20qualification&rft.btitle=2010%2035th%20IEEE%20Photovoltaic%20Specialists%20Conference&rft.au=Messenger,%20S%20R&rft.date=2010-06&rft.spage=002578&rft.epage=002583&rft.pages=002578-002583&rft.issn=0160-8371&rft.isbn=9781424458905&rft.isbn_list=1424458900&rft_id=info:doi/10.1109/PVSC.2010.5614673&rft.eisbn=9781424458912&rft.eisbn_list=1424458927&rft.eisbn_list=1424458919&rft.eisbn_list=9781424458929&rft_dat=%3Cieee_6IE%3E5614673%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-c2c6505807d6fdbcdcbdfef2b74802fcdea5585395cca53822ebd132296c3a4a3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5614673&rfr_iscdi=true