Electron backscatter diffraction: Exploring the microstructure in Cu(In,Ga)(S,Se)2 and CdTe thin-film solar cells

Electron backscatter diffraction (EBSD) in a scanning electron microscope provides access to grain-size and local-orientation distributions, film textures and grain-boundary types of thin-film solar cells. Since EBSD exhibits an information depth of only about 20 nm in Cu(In, Ga)(S, Se) 2 and CdTe t...

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Bibliographic Details
Main Authors: Abou-Ras, D, Caballero, R, Kavalakkatt, J, Nichterwitz, M, Unold, T, Schock, H.-W, Bucheler, S, Tiwari, A N
Format: Conference Proceeding
Language:English
Online Access:Request full text
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Summary:Electron backscatter diffraction (EBSD) in a scanning electron microscope provides access to grain-size and local-orientation distributions, film textures and grain-boundary types of thin-film solar cells. Since EBSD exhibits an information depth of only about 20 nm in Cu(In, Ga)(S, Se) 2 and CdTe thin films, the most important issue of the corresponding analyses is an appropriate preparation of layer or cross-section surfaces in order to reduce possible surface roughnesses to a minimum. When EBSD is combined with energy-dispersive X-ray spectrometry (EDX), electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements, compositional as well as electrical and optoelectronic material properties are obtained, complementarily to the microstructural information.
ISSN:0160-8371
DOI:10.1109/PVSC.2010.5616785