Development of 90Nm InGaAs HEMTs and Benchmarking Logic Performance with Si CMOS

We have developed 90nm In 0.7 Ga 0.3 As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.

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Bibliographic Details
Main Authors: Kuang-Yu Cheng, Chan, D, Fei Tan, Huiming Xu, Feng, M, Chih-Hsin Ko, Wann, C
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
HEMTs
Indium gallium arsenide
Logic gates
MODFETs
MOSFET circuits
Silicon
Online Access:Request full text
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Description
Summary:We have developed 90nm In 0.7 Ga 0.3 As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2010.5619674