Improved ESD protection in advanced FDSOI by using hybrid SOI/bulk Co-integration

We investigate the influence of different technological parameters on ESD robustness in advanced FDSOI devices. From Transmission Line Pulse (TLP) measurements, a comparison with other technologies enables us to evaluate the impact of ultrathin film and buried oxide. A solution based on hybrid SOI/b...

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Main Authors: Benoist, T, Fenouillet-Beranger, C, Guitard, N, Huguenin, J.-L, Monfray, S, Galy, P, Buj, C, Andrieu, F, Perreau, P, Marin-Cudraz, D, Faynot, O, Cristoloveanu, S, Gentil, P
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Electric fields
Electrostatic discharge
Leakage current
Logic gates
Robustness
Silicon
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creator Benoist, T
Fenouillet-Beranger, C
Guitard, N
Huguenin, J.-L
Monfray, S
Galy, P
Buj, C
Andrieu, F
Perreau, P
Marin-Cudraz, D
Faynot, O
Cristoloveanu, S
Gentil, P
description We investigate the influence of different technological parameters on ESD robustness in advanced FDSOI devices. From Transmission Line Pulse (TLP) measurements, a comparison with other technologies enables us to evaluate the impact of ultrathin film and buried oxide. A solution based on hybrid SOI/bulk co-integration by using Silicon-On-Nothing technology is presented in order to improve ultra-thin film ESD performance.
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Conductivity
Electric fields
Electrostatic discharge
Leakage current
Logic gates
Robustness
Silicon
title Improved ESD protection in advanced FDSOI by using hybrid SOI/bulk Co-integration
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