Anomalous ESD failures in NLDMOS during reverse recovery

Anomalous NLDMOS behavior under ESD stresses is investigated. Negative MM test results show failures at low stress voltage and local distributions of destruction spots. TCAD simulations clarified that the reverse recovery current during the MM stress causes parasitic NPN turn-on and effectively lowe...

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Bibliographic Details
Main Authors: Hirano, T, Hase, M, Ogura, T, Tanaka, S, Fujiwara, S
Format: Conference Proceeding
Language:English
Subjects:
Doping
Electrostatic discharge
Integrated circuit modeling
Lattices
Semiconductor process modeling
Stress
Transistors
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Summary:Anomalous NLDMOS behavior under ESD stresses is investigated. Negative MM test results show failures at low stress voltage and local distributions of destruction spots. TCAD simulations clarified that the reverse recovery current during the MM stress causes parasitic NPN turn-on and effectively lowers the trigger voltage (Vt1).