Calculation of current-voltage characteristics of a ballistic transistor based on metallic single-wall carbon nanotube

The physico-mathematical model of coherent electron transport in a metallic single-wall carbon nanotube ballistic transistor is developed. The model is based on a numerical solution of stationary wave equation for electrons in the nanotube by a finite-difference method. The current-voltage character...

Full description

Saved in:
Bibliographic Details
Main Author: Pozdnyakov, D V
Format: Conference Proceeding
Language:English
Subjects:
Carbon nanotubes
Current-voltage characteristics
Electric fields
Mathematical model
Numerical models
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 871
container_issue
container_start_page 869
container_title
container_volume
creator Pozdnyakov, D V
description The physico-mathematical model of coherent electron transport in a metallic single-wall carbon nanotube ballistic transistor is developed. The model is based on a numerical solution of stationary wave equation for electrons in the nanotube by a finite-difference method. The current-voltage characteristics of such transistor are calculated.
doi_str_mv 10.1109/CRMICO.2010.5632939
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5632939</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5632939</ieee_id><sourcerecordid>5632939</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-342a82ae7d5bd91ceee3fa967c77725ba6087d442462705fd6f753a7d36c29363</originalsourceid><addsrcrecordid>eNotUMtqwzAQVCmFltRfkIt-wKneso7F9BFICZTcw1qWUxXFLpKS0r-v8jjtzszusDsIzSlZUErMU_v5sWzXC0YKIRVnhpsbVBndGKU4l5wLcnvGVDAhNG0Ev0dVSt-EEGqUlto8oGMLwR4CZD-NeBqwPcToxlwfp5Bh57D9ggg2u-hT9jadRgB3EMIZ4xxhTKWdYiGT63Fx2bt80i1OftwFV_8WhC3ErmgjjFM-dO4R3Q0QkquudYY2ry-b9r1erd-W7fOq9obkmgsGDQOne9n1hlrnHB-gnG611kx2oEije1HeU0wTOfRq0JKD7rmyJQ7FZ2h-sfVldfsT_R7i3_YaFv8HfetgOQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Calculation of current-voltage characteristics of a ballistic transistor based on metallic single-wall carbon nanotube</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Pozdnyakov, D V</creator><creatorcontrib>Pozdnyakov, D V</creatorcontrib><description>The physico-mathematical model of coherent electron transport in a metallic single-wall carbon nanotube ballistic transistor is developed. The model is based on a numerical solution of stationary wave equation for electrons in the nanotube by a finite-difference method. The current-voltage characteristics of such transistor are calculated.</description><identifier>ISBN: 9781424471843</identifier><identifier>ISBN: 1424471842</identifier><identifier>EISBN: 9789663353340</identifier><identifier>EISBN: 9663353341</identifier><identifier>DOI: 10.1109/CRMICO.2010.5632939</identifier><language>eng</language><publisher>IEEE</publisher><subject>Carbon nanotubes ; Current-voltage characteristics ; Electric fields ; Mathematical model ; Numerical models ; Transistors</subject><ispartof>2010 20th International Crimean Conference "Microwave &amp; Telecommunication Technology", 2010, p.869-871</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5632939$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5632939$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Pozdnyakov, D V</creatorcontrib><title>Calculation of current-voltage characteristics of a ballistic transistor based on metallic single-wall carbon nanotube</title><title>2010 20th International Crimean Conference "Microwave &amp; Telecommunication Technology"</title><addtitle>CRMICO</addtitle><description>The physico-mathematical model of coherent electron transport in a metallic single-wall carbon nanotube ballistic transistor is developed. The model is based on a numerical solution of stationary wave equation for electrons in the nanotube by a finite-difference method. The current-voltage characteristics of such transistor are calculated.</description><subject>Carbon nanotubes</subject><subject>Current-voltage characteristics</subject><subject>Electric fields</subject><subject>Mathematical model</subject><subject>Numerical models</subject><subject>Transistors</subject><isbn>9781424471843</isbn><isbn>1424471842</isbn><isbn>9789663353340</isbn><isbn>9663353341</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotUMtqwzAQVCmFltRfkIt-wKneso7F9BFICZTcw1qWUxXFLpKS0r-v8jjtzszusDsIzSlZUErMU_v5sWzXC0YKIRVnhpsbVBndGKU4l5wLcnvGVDAhNG0Ev0dVSt-EEGqUlto8oGMLwR4CZD-NeBqwPcToxlwfp5Bh57D9ggg2u-hT9jadRgB3EMIZ4xxhTKWdYiGT63Fx2bt80i1OftwFV_8WhC3ErmgjjFM-dO4R3Q0QkquudYY2ry-b9r1erd-W7fOq9obkmgsGDQOne9n1hlrnHB-gnG611kx2oEije1HeU0wTOfRq0JKD7rmyJQ7FZ2h-sfVldfsT_R7i3_YaFv8HfetgOQ</recordid><startdate>201009</startdate><enddate>201009</enddate><creator>Pozdnyakov, D V</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201009</creationdate><title>Calculation of current-voltage characteristics of a ballistic transistor based on metallic single-wall carbon nanotube</title><author>Pozdnyakov, D V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-342a82ae7d5bd91ceee3fa967c77725ba6087d442462705fd6f753a7d36c29363</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Carbon nanotubes</topic><topic>Current-voltage characteristics</topic><topic>Electric fields</topic><topic>Mathematical model</topic><topic>Numerical models</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Pozdnyakov, D V</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pozdnyakov, D V</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Calculation of current-voltage characteristics of a ballistic transistor based on metallic single-wall carbon nanotube</atitle><btitle>2010 20th International Crimean Conference "Microwave &amp; Telecommunication Technology"</btitle><stitle>CRMICO</stitle><date>2010-09</date><risdate>2010</risdate><spage>869</spage><epage>871</epage><pages>869-871</pages><isbn>9781424471843</isbn><isbn>1424471842</isbn><eisbn>9789663353340</eisbn><eisbn>9663353341</eisbn><abstract>The physico-mathematical model of coherent electron transport in a metallic single-wall carbon nanotube ballistic transistor is developed. The model is based on a numerical solution of stationary wave equation for electrons in the nanotube by a finite-difference method. The current-voltage characteristics of such transistor are calculated.</abstract><pub>IEEE</pub><doi>10.1109/CRMICO.2010.5632939</doi><tpages>3</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 9781424471843
ispartof 2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010, p.869-871
issn
language eng
recordid cdi_ieee_primary_5632939
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Carbon nanotubes
Current-voltage characteristics
Electric fields
Mathematical model
Numerical models
Transistors
title Calculation of current-voltage characteristics of a ballistic transistor based on metallic single-wall carbon nanotube
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T23%3A41%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Calculation%20of%20current-voltage%20characteristics%20of%20a%20ballistic%20transistor%20based%20on%20metallic%20single-wall%20carbon%20nanotube&rft.btitle=2010%2020th%20International%20Crimean%20Conference%20%22Microwave%20&%20Telecommunication%20Technology%22&rft.au=Pozdnyakov,%20D%20V&rft.date=2010-09&rft.spage=869&rft.epage=871&rft.pages=869-871&rft.isbn=9781424471843&rft.isbn_list=1424471842&rft_id=info:doi/10.1109/CRMICO.2010.5632939&rft.eisbn=9789663353340&rft.eisbn_list=9663353341&rft_dat=%3Cieee_6IE%3E5632939%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-342a82ae7d5bd91ceee3fa967c77725ba6087d442462705fd6f753a7d36c29363%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5632939&rfr_iscdi=true