Co-planar Ka-band monolithic amplifiers based on domestic GaAs mHEMT process

The design of Ka-band single- and two-stage monolithic coplanar amplifiers (CAs) based on the domestic 0.15 μm GaAs mHEMT technology is presented.

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Bibliographic Details
Main Authors: Cherkashin, M V, Dmitrienko, K S, Kokolov, A A, Dobush, I M, Salnikov, A S, Fedorov, Yu V, Sheyerman, F I, Babak, L I
Format: Conference Proceeding
Language:English
Subjects:
Electronic mail
Gain
Gallium arsenide
Integrated circuit modeling
Logic gates
mHEMTs
Mobile communication
Online Access:Request full text
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Description
Summary:The design of Ka-band single- and two-stage monolithic coplanar amplifiers (CAs) based on the domestic 0.15 μm GaAs mHEMT technology is presented.
DOI:10.1109/CRMICO.2010.5632973