Photovoltaic MWIR Type-II Superlattice Focal Plane Array on GaAs Substrate

Recent improvements in the performance of type-II superlattice (T2SL) photodetectors has spurred interest in developing low-cost and large-format focal plane arrays (FPAs) on this material system. Due to the limitations of size and cost of native GaSb substrates, GaAs is an attractive alternative wi...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2010-12, Vol.46 (12), p.1704-1708
Main Authors: Huang, Edward Kwei-Wei, Delaunay, Pierre-Yves, Binh-Minh Nguyen, Pour, Siamak Abdollahi, Razeghi, Manijeh
Format: Article
Language:English
Subjects:
Alternative substrate
Applied sciences
Arrays
Dark current
Electronics
Exact sciences and technology
Focal plane
focal plane array
GaAs infrared
Gallium arsenide
Gallium arsenides
mid-wavelength infrared
Noise equivalent temperature difference
Optoelectronic devices
Photodetectors
Photovoltaic cells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solar cells
Substrates
Superlattices
type-II superlattice
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Summary:Recent improvements in the performance of type-II superlattice (T2SL) photodetectors has spurred interest in developing low-cost and large-format focal plane arrays (FPAs) on this material system. Due to the limitations of size and cost of native GaSb substrates, GaAs is an attractive alternative with 8 in wafers commercially available, but is 7.8% lattice mismatched to T2SL. In this paper, we present a photovoltaic T2SL 320 × 256 FPA in the mid-wavelength infrared on GaAs substrate. The FPA attained a median noise equivalent temperature difference of 13 and 10 mK (F# = 2.3) with integration times of 10.02 and 19.06 ms, respectively, at 67 K.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2010.2061218