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Radiation-hard, lightweight 12% AM0 BOL InP/Si solar cells
Indium phosphide (InP) space solar cells were made by Spire on lightweight Si wafers to greatly increase the cell end-of-life (EOL) power density. A NASA-measured best cell efficiency of 12.5% was obtained at one-sun AM0 beginning-of-life (BOL) for a 2/spl times/4 cm cell. Average efficiency for fif...
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| creator | Wojtczuk, S. Colter, P. Karam, N.H. Serreze, H.B. Summers, G.P. Walters, R.J. |
| description | Indium phosphide (InP) space solar cells were made by Spire on lightweight Si wafers to greatly increase the cell end-of-life (EOL) power density. A NASA-measured best cell efficiency of 12.5% was obtained at one-sun AM0 beginning-of-life (BOL) for a 2/spl times/4 cm cell. Average efficiency for fifteen 2/spl times/2 cm InP heteroepitaxial cells on 16 mil Si wafers tested by NASA was 12.3%. Data are presented comparing 1 MeV electron and 3.9 MeV alpha particle irradiation showing relatively little cell power output degradation out to a very high fluence (less than 20% after a fluence of about 4/spl times/10/sup 16/ 1 MeV electrons/cm/sup 2/, about 40/spl times/ the "standard" fluence). Calculations are presented which show that in very high radiation environments (e.g. van Allen proton belts), these cells can provide over twice as much EOL power density than GaAs/Ge or Si cells. |
| doi_str_mv | 10.1109/PVSC.1996.563970 |
| format | conference_proceeding |
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A NASA-measured best cell efficiency of 12.5% was obtained at one-sun AM0 beginning-of-life (BOL) for a 2/spl times/4 cm cell. Average efficiency for fifteen 2/spl times/2 cm InP heteroepitaxial cells on 16 mil Si wafers tested by NASA was 12.3%. Data are presented comparing 1 MeV electron and 3.9 MeV alpha particle irradiation showing relatively little cell power output degradation out to a very high fluence (less than 20% after a fluence of about 4/spl times/10/sup 16/ 1 MeV electrons/cm/sup 2/, about 40/spl times/ the "standard" fluence). 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Calculations are presented which show that in very high radiation environments (e.g. van Allen proton belts), these cells can provide over twice as much EOL power density than GaAs/Ge or Si cells.</description><subject>Alpha particles</subject><subject>Belts</subject><subject>Degradation</subject><subject>Electrons</subject><subject>Gallium arsenide</subject><subject>Indium phosphide</subject><subject>NASA</subject><subject>Photovoltaic cells</subject><subject>Protons</subject><subject>Testing</subject><issn>0160-8371</issn><isbn>0780331664</isbn><isbn>9780780331662</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9jr8LgkAYQA8qyH7s0XRLW-r3eXVqW0lRUCQZrXLklReXhidE_31EzS3vDW95hAwQHEQI3fiURA6GIXemnIU-NEgH_AAYQ84nTWIBcrAD5mObdIy5AXjAOFpkdhCZErUqCzsXVTamWl3z-ik_pOiN6HwHdLHf0k0Ru4miptSiomeptemR1kVoI_s_d8lwtTxGa1tJKdNHpe6ieqXfHfY3vgHR_DTc</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Wojtczuk, S.</creator><creator>Colter, P.</creator><creator>Karam, N.H.</creator><creator>Serreze, H.B.</creator><creator>Summers, G.P.</creator><creator>Walters, R.J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Radiation-hard, lightweight 12% AM0 BOL InP/Si solar cells</title><author>Wojtczuk, S. ; Colter, P. ; Karam, N.H. ; Serreze, H.B. ; Summers, G.P. ; Walters, R.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_5639703</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Alpha particles</topic><topic>Belts</topic><topic>Degradation</topic><topic>Electrons</topic><topic>Gallium arsenide</topic><topic>Indium phosphide</topic><topic>NASA</topic><topic>Photovoltaic cells</topic><topic>Protons</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Wojtczuk, S.</creatorcontrib><creatorcontrib>Colter, P.</creatorcontrib><creatorcontrib>Karam, N.H.</creatorcontrib><creatorcontrib>Serreze, H.B.</creatorcontrib><creatorcontrib>Summers, G.P.</creatorcontrib><creatorcontrib>Walters, R.J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wojtczuk, S.</au><au>Colter, P.</au><au>Karam, N.H.</au><au>Serreze, H.B.</au><au>Summers, G.P.</au><au>Walters, R.J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Radiation-hard, lightweight 12% AM0 BOL InP/Si solar cells</atitle><btitle>Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996</btitle><stitle>PVSC</stitle><date>1996</date><risdate>1996</risdate><spage>151</spage><epage>155</epage><pages>151-155</pages><issn>0160-8371</issn><isbn>0780331664</isbn><isbn>9780780331662</isbn><abstract>Indium phosphide (InP) space solar cells were made by Spire on lightweight Si wafers to greatly increase the cell end-of-life (EOL) power density. A NASA-measured best cell efficiency of 12.5% was obtained at one-sun AM0 beginning-of-life (BOL) for a 2/spl times/4 cm cell. Average efficiency for fifteen 2/spl times/2 cm InP heteroepitaxial cells on 16 mil Si wafers tested by NASA was 12.3%. Data are presented comparing 1 MeV electron and 3.9 MeV alpha particle irradiation showing relatively little cell power output degradation out to a very high fluence (less than 20% after a fluence of about 4/spl times/10/sup 16/ 1 MeV electrons/cm/sup 2/, about 40/spl times/ the "standard" fluence). Calculations are presented which show that in very high radiation environments (e.g. van Allen proton belts), these cells can provide over twice as much EOL power density than GaAs/Ge or Si cells.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.1996.563970</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996, p.151-155 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_563970 |
| source | IEEE Xplore All Conference Series |
| subjects | Alpha particles Belts Degradation Electrons Gallium arsenide Indium phosphide NASA Photovoltaic cells Protons Testing |
| title | Radiation-hard, lightweight 12% AM0 BOL InP/Si solar cells |
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