Development of p/n and n/p thick emitter InP solar cells

Both n/p and p/n InP thick emitter (0.3 /spl mu/m) space solar cells with and without Ga/sub 0.5/In/sub 0.5/P windows are studied. Both polarity cells are considered for possible growth on Ge. While not achieving the high efficiencies of thin emitter InP cells, the thicker emitter cells may provide...

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Bibliographic Details
Main Authors: Sharps, P.R., Timmons, M.L., Messenger, S.R., Cotal, H.L., Summers, G.P., Iles, P.A.
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Indium phosphide
Passivation
Photonic band gap
Photovoltaic cells
Photovoltaic systems
Radiative recombination
Solar power generation
Substrates
Wideband
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Summary:Both n/p and p/n InP thick emitter (0.3 /spl mu/m) space solar cells with and without Ga/sub 0.5/In/sub 0.5/P windows are studied. Both polarity cells are considered for possible growth on Ge. While not achieving the high efficiencies of thin emitter InP cells, the thicker emitter cells may provide an advantage in radiation hardness. The Ga/sub 0.5/In/sub 0.5/P window has little effect on cell performance, for either polarity.
ISSN:0160-8371
DOI:10.1109/PVSC.1996.563975