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High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon
We performed a detailed study to examine the limiting performance available using "photovoltaic-grade" Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and...
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creator | Gee, J.M. King, R.R. Mitchell, K.W. |
description | We performed a detailed study to examine the limiting performance available using "photovoltaic-grade" Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations. The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-/spl mu/s bulk lifetimes and 17.6% efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures. |
doi_str_mv | 10.1109/PVSC.1996.564030 |
format | conference_proceeding |
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Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations. The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-/spl mu/s bulk lifetimes and 17.6% efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 0780331664</identifier><identifier>ISBN: 9780780331662</identifier><identifier>DOI: 10.1109/PVSC.1996.564030</identifier><language>eng</language><publisher>IEEE</publisher><subject>Fabrication ; Laboratories ; Photovoltaic cells ; Photovoltaic systems ; Radiative recombination ; Silicon ; Solar power generation ; Spontaneous emission ; Substrates ; Thermal degradation</subject><ispartof>Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996, p.409-412</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/564030$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4040,4041,27916,54546,54911,54923</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/564030$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gee, J.M.</creatorcontrib><creatorcontrib>King, R.R.</creatorcontrib><creatorcontrib>Mitchell, K.W.</creatorcontrib><title>High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon</title><title>Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996</title><addtitle>PVSC</addtitle><description>We performed a detailed study to examine the limiting performance available using "photovoltaic-grade" Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations. The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-/spl mu/s bulk lifetimes and 17.6% efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures.</description><subject>Fabrication</subject><subject>Laboratories</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic systems</subject><subject>Radiative recombination</subject><subject>Silicon</subject><subject>Solar power generation</subject><subject>Spontaneous emission</subject><subject>Substrates</subject><subject>Thermal degradation</subject><issn>0160-8371</issn><isbn>0780331664</isbn><isbn>9780780331662</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkE1LxDAURQMqODO6F1f5A61JX5s2SynqCAMKfmxL-vo6jdamJBlh_PWOjKvLPVzO4jJ2JUUqpdA3z-8vdSq1VmmhcgHihC1FWQkAqVR-yhZCKpFUUMpztgzhQ4hMgJIL1qztdkio7y1amnDPkcaRh-h3GHeeAjdTx2fvkEL4a_M8Wup4dHweXHTfbozGYrL1piNe_zgcvBnDp-XBjhbddMHO-gOgy_9csbf7u9d6nWyeHh7r201iM5nHRJqWoC2oLyvVdlohloBgsk6UfVspLIoKClmaSkOfY2sOK6AsywgNgM41rNj10WuJqJm9_TJ-3xy_gF-tH1VU</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Gee, J.M.</creator><creator>King, R.R.</creator><creator>Mitchell, K.W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon</title><author>Gee, J.M. ; King, R.R. ; Mitchell, K.W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i214t-1abe3b5ef786bd96cc73c3a2d07fb86c5583517a893f4cba86b3e222eca339493</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Fabrication</topic><topic>Laboratories</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic systems</topic><topic>Radiative recombination</topic><topic>Silicon</topic><topic>Solar power generation</topic><topic>Spontaneous emission</topic><topic>Substrates</topic><topic>Thermal degradation</topic><toplevel>online_resources</toplevel><creatorcontrib>Gee, J.M.</creatorcontrib><creatorcontrib>King, R.R.</creatorcontrib><creatorcontrib>Mitchell, K.W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gee, J.M.</au><au>King, R.R.</au><au>Mitchell, K.W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon</atitle><btitle>Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996</btitle><stitle>PVSC</stitle><date>1996</date><risdate>1996</risdate><spage>409</spage><epage>412</epage><pages>409-412</pages><issn>0160-8371</issn><isbn>0780331664</isbn><isbn>9780780331662</isbn><abstract>We performed a detailed study to examine the limiting performance available using "photovoltaic-grade" Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations. The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-/spl mu/s bulk lifetimes and 17.6% efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.1996.564030</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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identifier | ISSN: 0160-8371 |
ispartof | Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996, p.409-412 |
issn | 0160-8371 |
language | eng |
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source | IEEE Xplore All Conference Series |
subjects | Fabrication Laboratories Photovoltaic cells Photovoltaic systems Radiative recombination Silicon Solar power generation Spontaneous emission Substrates Thermal degradation |
title | High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon |
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