Total-ionizing-dose radiation response of partially-depleted SOI devices

The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.

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Bibliographic Details
Main Authors: Rezzak, N, En Xia Zhang, Alles, M L, Schrimpf, R D, Hughes, H
Format: Conference Proceeding
Language:English
Subjects:
Doping profiles
MOS devices
Semiconductor device modeling
Semiconductor process modeling
Silicon
Silicon on insulator technology
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Description
Summary:The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2010.5641057