Total-ionizing-dose radiation response of partially-depleted SOI devices

The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.

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Main Authors: Rezzak, N, En Xia Zhang, Alles, M L, Schrimpf, R D, Hughes, H
Format: Conference Proceeding
Language:English
Subjects:
Doping profiles
MOS devices
Semiconductor device modeling
Semiconductor process modeling
Silicon
Silicon on insulator technology
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creator Rezzak, N
En Xia Zhang
Alles, M L
Schrimpf, R D
Hughes, H
description The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.
doi_str_mv 10.1109/SOI.2010.5641057
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5641057</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5641057</ieee_id><sourcerecordid>5641057</sourcerecordid><originalsourceid>FETCH-LOGICAL-c222t-1de351f23a5b1673c1e29ce10a1753bb926dc7a614d11794be85afa57049af003</originalsourceid><addsrcrecordid>eNotUE1Lw0AUXL_AWHMXvOQPbN33djebPUpRWyj0YAVv5SX7IiuxCUkQ6q830MxlmBkYhhHiAdQSQPmn991miWpSNjegrLsQd2DQGA_o1aVI0DonEb29Eql3xZxpVVyLBJQrZI7weSvSYfhWE4zF3GAi1vt2pEbG9hj_4vFLhnbgrKcQaZy8rOeha4-T1dZZR_0YqWlOMnDX8Mghm0ZlgX9jxcO9uKmpGTideSE-Xl_2q7Xc7t42q-etrBBxlBBYW6hRky0hd7oCRl8xKAJndVl6zEPlKAcTAJw3JReWarJOGU-1UnohHs-9kZkPXR9_qD8d5lP0P81mUMI</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Total-ionizing-dose radiation response of partially-depleted SOI devices</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Rezzak, N ; En Xia Zhang ; Alles, M L ; Schrimpf, R D ; Hughes, H</creator><creatorcontrib>Rezzak, N ; En Xia Zhang ; Alles, M L ; Schrimpf, R D ; Hughes, H</creatorcontrib><description>The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.</description><identifier>ISSN: 1078-621X</identifier><identifier>ISBN: 9781424491308</identifier><identifier>ISBN: 1424491304</identifier><identifier>EISSN: 2577-2295</identifier><identifier>EISBN: 1424491290</identifier><identifier>EISBN: 9781424491285</identifier><identifier>EISBN: 9781424491292</identifier><identifier>EISBN: 1424491282</identifier><identifier>DOI: 10.1109/SOI.2010.5641057</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping profiles ; MOS devices ; Semiconductor device modeling ; Semiconductor process modeling ; Silicon ; Silicon on insulator technology</subject><ispartof>2010 IEEE International SOI Conference (SOI), 2010, p.1-2</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c222t-1de351f23a5b1673c1e29ce10a1753bb926dc7a614d11794be85afa57049af003</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5641057$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27924,54554,54919,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5641057$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Rezzak, N</creatorcontrib><creatorcontrib>En Xia Zhang</creatorcontrib><creatorcontrib>Alles, M L</creatorcontrib><creatorcontrib>Schrimpf, R D</creatorcontrib><creatorcontrib>Hughes, H</creatorcontrib><title>Total-ionizing-dose radiation response of partially-depleted SOI devices</title><title>2010 IEEE International SOI Conference (SOI)</title><addtitle>SOI</addtitle><description>The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.</description><subject>Doping profiles</subject><subject>MOS devices</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor process modeling</subject><subject>Silicon</subject><subject>Silicon on insulator technology</subject><issn>1078-621X</issn><issn>2577-2295</issn><isbn>9781424491308</isbn><isbn>1424491304</isbn><isbn>1424491290</isbn><isbn>9781424491285</isbn><isbn>9781424491292</isbn><isbn>1424491282</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotUE1Lw0AUXL_AWHMXvOQPbN33djebPUpRWyj0YAVv5SX7IiuxCUkQ6q830MxlmBkYhhHiAdQSQPmn991miWpSNjegrLsQd2DQGA_o1aVI0DonEb29Eql3xZxpVVyLBJQrZI7weSvSYfhWE4zF3GAi1vt2pEbG9hj_4vFLhnbgrKcQaZy8rOeha4-T1dZZR_0YqWlOMnDX8Mghm0ZlgX9jxcO9uKmpGTideSE-Xl_2q7Xc7t42q-etrBBxlBBYW6hRky0hd7oCRl8xKAJndVl6zEPlKAcTAJw3JReWarJOGU-1UnohHs-9kZkPXR9_qD8d5lP0P81mUMI</recordid><startdate>201010</startdate><enddate>201010</enddate><creator>Rezzak, N</creator><creator>En Xia Zhang</creator><creator>Alles, M L</creator><creator>Schrimpf, R D</creator><creator>Hughes, H</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201010</creationdate><title>Total-ionizing-dose radiation response of partially-depleted SOI devices</title><author>Rezzak, N ; En Xia Zhang ; Alles, M L ; Schrimpf, R D ; Hughes, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c222t-1de351f23a5b1673c1e29ce10a1753bb926dc7a614d11794be85afa57049af003</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Doping profiles</topic><topic>MOS devices</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor process modeling</topic><topic>Silicon</topic><topic>Silicon on insulator technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rezzak, N</creatorcontrib><creatorcontrib>En Xia Zhang</creatorcontrib><creatorcontrib>Alles, M L</creatorcontrib><creatorcontrib>Schrimpf, R D</creatorcontrib><creatorcontrib>Hughes, H</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rezzak, N</au><au>En Xia Zhang</au><au>Alles, M L</au><au>Schrimpf, R D</au><au>Hughes, H</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Total-ionizing-dose radiation response of partially-depleted SOI devices</atitle><btitle>2010 IEEE International SOI Conference (SOI)</btitle><stitle>SOI</stitle><date>2010-10</date><risdate>2010</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><issn>1078-621X</issn><eissn>2577-2295</eissn><isbn>9781424491308</isbn><isbn>1424491304</isbn><eisbn>1424491290</eisbn><eisbn>9781424491285</eisbn><eisbn>9781424491292</eisbn><eisbn>1424491282</eisbn><abstract>The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.</abstract><pub>IEEE</pub><doi>10.1109/SOI.2010.5641057</doi><tpages>2</tpages></addata></record>
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Doping profiles
MOS devices
Semiconductor device modeling
Semiconductor process modeling
Silicon
Silicon on insulator technology
title Total-ionizing-dose radiation response of partially-depleted SOI devices
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T12%3A49%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Total-ionizing-dose%20radiation%20response%20of%20partially-depleted%20SOI%20devices&rft.btitle=2010%20IEEE%20International%20SOI%20Conference%20(SOI)&rft.au=Rezzak,%20N&rft.date=2010-10&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.issn=1078-621X&rft.eissn=2577-2295&rft.isbn=9781424491308&rft.isbn_list=1424491304&rft_id=info:doi/10.1109/SOI.2010.5641057&rft.eisbn=1424491290&rft.eisbn_list=9781424491285&rft.eisbn_list=9781424491292&rft.eisbn_list=1424491282&rft_dat=%3Cieee_6IE%3E5641057%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c222t-1de351f23a5b1673c1e29ce10a1753bb926dc7a614d11794be85afa57049af003%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5641057&rfr_iscdi=true