A comparison of gettering in single- and multicrystalline silicon for solar cells

The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of getteri...

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Bibliographic Details
Main Authors: Sopori, B.L., Jastrzebski, L., Tan, T.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum
Fabrication
Gettering
Hydrogen
Impurities
Photovoltaic cells
Semiconductor device modeling
Silicon
Temperature distribution
Ultrasonic imaging
Online Access:Request full text
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Description
Summary:The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.
ISSN:0160-8371
DOI:10.1109/PVSC.1996.564206