Reaction analysis of the formation of CIS at temperatures from 250 to 400/spl deg/C

A chemical reaction analysis of the selenization of copper indium layers to form copper indium diselenide is presented. Time progressive selenizations were carried out in a tubular laminar flow reactor in a dilute H/sub 2/Se atmosphere at 250, 325 and 400/spl deg/C. The reacted films were analyzed b...

Full description

Saved in:
Bibliographic Details
Main Authors: Orbey, N., Hichri, H., Birkmire, R.W., Russell, T.W.F.
Format: Conference Proceeding
Language:English
Subjects:
Atmosphere
Atomic layer deposition
Chemical analysis
Computational Intelligence Society
Copper
Electromagnetic wave absorption
Indium
Inductors
Temperature
X-ray diffraction
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A chemical reaction analysis of the selenization of copper indium layers to form copper indium diselenide is presented. Time progressive selenizations were carried out in a tubular laminar flow reactor in a dilute H/sub 2/Se atmosphere at 250, 325 and 400/spl deg/C. The reacted films were analyzed by X-ray diffraction and atomic absorption spectroscopy. The chemical species present in the reacted films were identified and a reaction network for film formation is proposed. The data from time progressive selenizations were analyzed to obtain species concentration profiles. Rate expressions were postulated and a mathematical model for the selenization was developed. The behavior of the model is compared with the experimentally determined species concentrations to obtain specific reaction rate constants at each temperature and the activation energies. This information is needed for the design and process control of commercial scale selenization reactors.
ISSN:0160-8371
DOI:10.1109/PVSC.1996.564294