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The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon
Progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (/spl mu/c-Si:H), as well as on combined a-Si:H//spl mu/c-Si:H stacked "micromorph" solar cells is reported. /spl mu/c-Si:H p-i-n cells with a thickness of 3.6 /spl mu/m, deposited with the use of a gas...
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| creator | Fischer, D. Dubail, S. Selvan, J.A.A. Vaucher, N.P. Platz, R. Hof, Ch Kroll, U. Meier, J. Torres, P. Keppner, H. Wyrsch, N. Goetz, M. Shah, A. Ufert, K.-D. |
| description | Progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (/spl mu/c-Si:H), as well as on combined a-Si:H//spl mu/c-Si:H stacked "micromorph" solar cells is reported. /spl mu/c-Si:H p-i-n cells with a thickness of 3.6 /spl mu/m, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mA/cm/sup 2/, and a stable efficiency of 7.7%. a-Si:H//spl mu/c-Si:H tandem cells with 13% initial, and with 10% degraded state efficiency are also demonstrated. In addition, methods to further increase the efficiency of combined a-Si:H//spl mu/c-Si:H solar cells are discussed. This includes the introduction of a ZnO reflector layer between a-Si:H and /spl mu/c-Si:H component cells, a new concept of which first experimental results are given. |
| doi_str_mv | 10.1109/PVSC.1996.564311 |
| format | conference_proceeding |
| fullrecord | <record><control><sourceid>proquest_6IE</sourceid><recordid>TN_cdi_ieee_primary_564311</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>564311</ieee_id><sourcerecordid>26196159</sourcerecordid><originalsourceid>FETCH-LOGICAL-i311t-ac23e5018ec6ee379157e2db336107bb6ee8867d98cbbbae3a1f37be347b9f513</originalsourceid><addsrcrecordid>eNotkMFLwzAYxQMqOKd38RR28NaZr1mTZjcZ6oSBwqZHS9J-XSNpM5MO3X9vZZ4ePB6P33uEXAObAjB19_q-XkxBKTHNxIwDnJALJnPGOQgxOyUjBoIlOZdwTi5i_GQsZVzAiHxsGqST1pbBtz7smgmN3ulAS3RuTvGnx66y3ZbqZG3nS9pj2XTe-e2B9v5bhyrSvrEdra1raRkOsdfO2Q5ptM6WvrskZ7V2Ea_-dUzeHh82i2Wyenl6XtyvEjuw9okuU44ZgxxLgcilgkxiWhk-MDJpzGDmuZCVyktjjEauoebSIJ9Jo-oM-JjcHnt3wX_tMfZFa-PfBt2h38ciFaAEZGoI3hyDFhGLXbCtDofi-Bn_Be3QYTQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>26196159</pqid></control><display><type>conference_proceeding</type><title>The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Fischer, D. ; Dubail, S. ; Selvan, J.A.A. ; Vaucher, N.P. ; Platz, R. ; Hof, Ch ; Kroll, U. ; Meier, J. ; Torres, P. ; Keppner, H. ; Wyrsch, N. ; Goetz, M. ; Shah, A. ; Ufert, K.-D.</creator><creatorcontrib>Fischer, D. ; Dubail, S. ; Selvan, J.A.A. ; Vaucher, N.P. ; Platz, R. ; Hof, Ch ; Kroll, U. ; Meier, J. ; Torres, P. ; Keppner, H. ; Wyrsch, N. ; Goetz, M. ; Shah, A. ; Ufert, K.-D.</creatorcontrib><description>Progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (/spl mu/c-Si:H), as well as on combined a-Si:H//spl mu/c-Si:H stacked "micromorph" solar cells is reported. /spl mu/c-Si:H p-i-n cells with a thickness of 3.6 /spl mu/m, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mA/cm/sup 2/, and a stable efficiency of 7.7%. a-Si:H//spl mu/c-Si:H tandem cells with 13% initial, and with 10% degraded state efficiency are also demonstrated. In addition, methods to further increase the efficiency of combined a-Si:H//spl mu/c-Si:H solar cells are discussed. This includes the introduction of a ZnO reflector layer between a-Si:H and /spl mu/c-Si:H component cells, a new concept of which first experimental results are given.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 0780331664</identifier><identifier>ISBN: 9780780331662</identifier><identifier>DOI: 10.1109/PVSC.1996.564311</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Crystallization ; Frequency ; Photovoltaic cells ; PIN photodiodes ; Plasma materials processing ; Plasma temperature ; Semiconductor thin films ; Silicon ; Substrates</subject><ispartof>Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996, p.1053-1056</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/564311$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,2052,4036,4037,27901,27902,54530,54895,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/564311$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fischer, D.</creatorcontrib><creatorcontrib>Dubail, S.</creatorcontrib><creatorcontrib>Selvan, J.A.A.</creatorcontrib><creatorcontrib>Vaucher, N.P.</creatorcontrib><creatorcontrib>Platz, R.</creatorcontrib><creatorcontrib>Hof, Ch</creatorcontrib><creatorcontrib>Kroll, U.</creatorcontrib><creatorcontrib>Meier, J.</creatorcontrib><creatorcontrib>Torres, P.</creatorcontrib><creatorcontrib>Keppner, H.</creatorcontrib><creatorcontrib>Wyrsch, N.</creatorcontrib><creatorcontrib>Goetz, M.</creatorcontrib><creatorcontrib>Shah, A.</creatorcontrib><creatorcontrib>Ufert, K.-D.</creatorcontrib><title>The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon</title><title>Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996</title><addtitle>PVSC</addtitle><description>Progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (/spl mu/c-Si:H), as well as on combined a-Si:H//spl mu/c-Si:H stacked "micromorph" solar cells is reported. /spl mu/c-Si:H p-i-n cells with a thickness of 3.6 /spl mu/m, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mA/cm/sup 2/, and a stable efficiency of 7.7%. a-Si:H//spl mu/c-Si:H tandem cells with 13% initial, and with 10% degraded state efficiency are also demonstrated. In addition, methods to further increase the efficiency of combined a-Si:H//spl mu/c-Si:H solar cells are discussed. This includes the introduction of a ZnO reflector layer between a-Si:H and /spl mu/c-Si:H component cells, a new concept of which first experimental results are given.</description><subject>Absorption</subject><subject>Crystallization</subject><subject>Frequency</subject><subject>Photovoltaic cells</subject><subject>PIN photodiodes</subject><subject>Plasma materials processing</subject><subject>Plasma temperature</subject><subject>Semiconductor thin films</subject><subject>Silicon</subject><subject>Substrates</subject><issn>0160-8371</issn><isbn>0780331664</isbn><isbn>9780780331662</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkMFLwzAYxQMqOKd38RR28NaZr1mTZjcZ6oSBwqZHS9J-XSNpM5MO3X9vZZ4ePB6P33uEXAObAjB19_q-XkxBKTHNxIwDnJALJnPGOQgxOyUjBoIlOZdwTi5i_GQsZVzAiHxsGqST1pbBtz7smgmN3ulAS3RuTvGnx66y3ZbqZG3nS9pj2XTe-e2B9v5bhyrSvrEdra1raRkOsdfO2Q5ptM6WvrskZ7V2Ea_-dUzeHh82i2Wyenl6XtyvEjuw9okuU44ZgxxLgcilgkxiWhk-MDJpzGDmuZCVyktjjEauoebSIJ9Jo-oM-JjcHnt3wX_tMfZFa-PfBt2h38ciFaAEZGoI3hyDFhGLXbCtDofi-Bn_Be3QYTQ</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Fischer, D.</creator><creator>Dubail, S.</creator><creator>Selvan, J.A.A.</creator><creator>Vaucher, N.P.</creator><creator>Platz, R.</creator><creator>Hof, Ch</creator><creator>Kroll, U.</creator><creator>Meier, J.</creator><creator>Torres, P.</creator><creator>Keppner, H.</creator><creator>Wyrsch, N.</creator><creator>Goetz, M.</creator><creator>Shah, A.</creator><creator>Ufert, K.-D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1996</creationdate><title>The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon</title><author>Fischer, D. ; Dubail, S. ; Selvan, J.A.A. ; Vaucher, N.P. ; Platz, R. ; Hof, Ch ; Kroll, U. ; Meier, J. ; Torres, P. ; Keppner, H. ; Wyrsch, N. ; Goetz, M. ; Shah, A. ; Ufert, K.-D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i311t-ac23e5018ec6ee379157e2db336107bb6ee8867d98cbbbae3a1f37be347b9f513</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Absorption</topic><topic>Crystallization</topic><topic>Frequency</topic><topic>Photovoltaic cells</topic><topic>PIN photodiodes</topic><topic>Plasma materials processing</topic><topic>Plasma temperature</topic><topic>Semiconductor thin films</topic><topic>Silicon</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Fischer, D.</creatorcontrib><creatorcontrib>Dubail, S.</creatorcontrib><creatorcontrib>Selvan, J.A.A.</creatorcontrib><creatorcontrib>Vaucher, N.P.</creatorcontrib><creatorcontrib>Platz, R.</creatorcontrib><creatorcontrib>Hof, Ch</creatorcontrib><creatorcontrib>Kroll, U.</creatorcontrib><creatorcontrib>Meier, J.</creatorcontrib><creatorcontrib>Torres, P.</creatorcontrib><creatorcontrib>Keppner, H.</creatorcontrib><creatorcontrib>Wyrsch, N.</creatorcontrib><creatorcontrib>Goetz, M.</creatorcontrib><creatorcontrib>Shah, A.</creatorcontrib><creatorcontrib>Ufert, K.-D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fischer, D.</au><au>Dubail, S.</au><au>Selvan, J.A.A.</au><au>Vaucher, N.P.</au><au>Platz, R.</au><au>Hof, Ch</au><au>Kroll, U.</au><au>Meier, J.</au><au>Torres, P.</au><au>Keppner, H.</au><au>Wyrsch, N.</au><au>Goetz, M.</au><au>Shah, A.</au><au>Ufert, K.-D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon</atitle><btitle>Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996</btitle><stitle>PVSC</stitle><date>1996</date><risdate>1996</risdate><spage>1053</spage><epage>1056</epage><pages>1053-1056</pages><issn>0160-8371</issn><isbn>0780331664</isbn><isbn>9780780331662</isbn><abstract>Progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (/spl mu/c-Si:H), as well as on combined a-Si:H//spl mu/c-Si:H stacked "micromorph" solar cells is reported. /spl mu/c-Si:H p-i-n cells with a thickness of 3.6 /spl mu/m, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mA/cm/sup 2/, and a stable efficiency of 7.7%. a-Si:H//spl mu/c-Si:H tandem cells with 13% initial, and with 10% degraded state efficiency are also demonstrated. In addition, methods to further increase the efficiency of combined a-Si:H//spl mu/c-Si:H solar cells are discussed. This includes the introduction of a ZnO reflector layer between a-Si:H and /spl mu/c-Si:H component cells, a new concept of which first experimental results are given.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.1996.564311</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996, p.1053-1056 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_564311 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption Crystallization Frequency Photovoltaic cells PIN photodiodes Plasma materials processing Plasma temperature Semiconductor thin films Silicon Substrates |
| title | The "micromorph" solar cell: extending a-Si:H technology towards thin film crystalline silicon |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T15%3A00%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20%22micromorph%22%20solar%20cell:%20extending%20a-Si:H%20technology%20towards%20thin%20film%20crystalline%20silicon&rft.btitle=Conference%20Record%20of%20the%20Twenty%20Fifth%20IEEE%20Photovoltaic%20Specialists%20Conference%20-%201996&rft.au=Fischer,%20D.&rft.date=1996&rft.spage=1053&rft.epage=1056&rft.pages=1053-1056&rft.issn=0160-8371&rft.isbn=0780331664&rft.isbn_list=9780780331662&rft_id=info:doi/10.1109/PVSC.1996.564311&rft_dat=%3Cproquest_6IE%3E26196159%3C/proquest_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i311t-ac23e5018ec6ee379157e2db336107bb6ee8867d98cbbbae3a1f37be347b9f513%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=26196159&rft_id=info:pmid/&rft_ieee_id=564311&rfr_iscdi=true |