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Power fast modulator thyristors
Fast power silicon thyristors are very promising for power modulators, but they have some drawbacks preventing their wide use. The main drawbacks are: instability of uniform current distribution which could lead to current localization (filamentation of current) and to burnout of the device under hi...
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creator | Brylevsky, V.I. Efanov, V.M. Kardo-Sysoev, A.F. Smirnova, I.A. Tchashnicov, I.G. |
description | Fast power silicon thyristors are very promising for power modulators, but they have some drawbacks preventing their wide use. The main drawbacks are: instability of uniform current distribution which could lead to current localization (filamentation of current) and to burnout of the device under high currents; turn on time depends on the thickness of base layers and as well on maximum voltage. High voltage thyristors have longer turn on times. So to turn on high voltage during short time it is necessary to connect many low voltage fast devices in series. In this case the main question, which should be answered is on how to synchronize all thyristors. The objective of the paper is to show how to overcome these drawbacks. |
doi_str_mv | 10.1109/MODSYM.1996.564444 |
format | conference_proceeding |
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The main drawbacks are: instability of uniform current distribution which could lead to current localization (filamentation of current) and to burnout of the device under high currents; turn on time depends on the thickness of base layers and as well on maximum voltage. High voltage thyristors have longer turn on times. So to turn on high voltage during short time it is necessary to connect many low voltage fast devices in series. In this case the main question, which should be answered is on how to synchronize all thyristors. The objective of the paper is to show how to overcome these drawbacks.</description><identifier>ISBN: 0780330765</identifier><identifier>ISBN: 9780780330764</identifier><identifier>DOI: 10.1109/MODSYM.1996.564444</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Current density ; Current distribution ; Doping ; Fingers ; Instruction sets ; Shape ; Silicon ; Thyristors ; Voltage</subject><ispartof>Proceedings of 1996 International Power Modulator Symposium, 1996, p.39-42</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/564444$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/564444$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Brylevsky, V.I.</creatorcontrib><creatorcontrib>Efanov, V.M.</creatorcontrib><creatorcontrib>Kardo-Sysoev, A.F.</creatorcontrib><creatorcontrib>Smirnova, I.A.</creatorcontrib><creatorcontrib>Tchashnicov, I.G.</creatorcontrib><title>Power fast modulator thyristors</title><title>Proceedings of 1996 International Power Modulator Symposium</title><addtitle>MODSYM</addtitle><description>Fast power silicon thyristors are very promising for power modulators, but they have some drawbacks preventing their wide use. The main drawbacks are: instability of uniform current distribution which could lead to current localization (filamentation of current) and to burnout of the device under high currents; turn on time depends on the thickness of base layers and as well on maximum voltage. High voltage thyristors have longer turn on times. So to turn on high voltage during short time it is necessary to connect many low voltage fast devices in series. In this case the main question, which should be answered is on how to synchronize all thyristors. The objective of the paper is to show how to overcome these drawbacks.</description><subject>Anodes</subject><subject>Current density</subject><subject>Current distribution</subject><subject>Doping</subject><subject>Fingers</subject><subject>Instruction sets</subject><subject>Shape</subject><subject>Silicon</subject><subject>Thyristors</subject><subject>Voltage</subject><isbn>0780330765</isbn><isbn>9780780330764</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpjYJAyNNAzNDSw1Pf1dwmO9NUztLQ00zM1MwECZgYuA3MLA2NjA3MzUw4G3uLiLAMgMDE1NTIy42SQD8gvTy1SSEssLlHIzU8pzUksyS9SKMmoLMosBrKKeRhY0xJzilN5oTQ3g5Sba4izh25mampqfEFRZm5iUWU8xCpjvJIAcxItJA</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Brylevsky, V.I.</creator><creator>Efanov, V.M.</creator><creator>Kardo-Sysoev, A.F.</creator><creator>Smirnova, I.A.</creator><creator>Tchashnicov, I.G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Power fast modulator thyristors</title><author>Brylevsky, V.I. ; Efanov, V.M. ; Kardo-Sysoev, A.F. ; Smirnova, I.A. ; Tchashnicov, I.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_5644443</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Anodes</topic><topic>Current density</topic><topic>Current distribution</topic><topic>Doping</topic><topic>Fingers</topic><topic>Instruction sets</topic><topic>Shape</topic><topic>Silicon</topic><topic>Thyristors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Brylevsky, V.I.</creatorcontrib><creatorcontrib>Efanov, V.M.</creatorcontrib><creatorcontrib>Kardo-Sysoev, A.F.</creatorcontrib><creatorcontrib>Smirnova, I.A.</creatorcontrib><creatorcontrib>Tchashnicov, I.G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brylevsky, V.I.</au><au>Efanov, V.M.</au><au>Kardo-Sysoev, A.F.</au><au>Smirnova, I.A.</au><au>Tchashnicov, I.G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Power fast modulator thyristors</atitle><btitle>Proceedings of 1996 International Power Modulator Symposium</btitle><stitle>MODSYM</stitle><date>1996</date><risdate>1996</risdate><spage>39</spage><epage>42</epage><pages>39-42</pages><isbn>0780330765</isbn><isbn>9780780330764</isbn><abstract>Fast power silicon thyristors are very promising for power modulators, but they have some drawbacks preventing their wide use. The main drawbacks are: instability of uniform current distribution which could lead to current localization (filamentation of current) and to burnout of the device under high currents; turn on time depends on the thickness of base layers and as well on maximum voltage. High voltage thyristors have longer turn on times. So to turn on high voltage during short time it is necessary to connect many low voltage fast devices in series. In this case the main question, which should be answered is on how to synchronize all thyristors. The objective of the paper is to show how to overcome these drawbacks.</abstract><pub>IEEE</pub><doi>10.1109/MODSYM.1996.564444</doi></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Anodes Current density Current distribution Doping Fingers Instruction sets Shape Silicon Thyristors Voltage |
title | Power fast modulator thyristors |
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