Temperature dependence of capture coefficients in trapping phenomena

The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature depe...

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Bibliographic Details
Main Authors: Lepadatu, Ana-Maria, Stavarache, Ionel, Lazanu, Sorina, Iancu, Vladimir, Mitroi, Mihai Razvan, Nigmatulin, Raoul Rashid, Ciurea, Magdalena Lidia
Format: Conference Proceeding
Language:English
Subjects:
capture coefficients
Electron traps
Gaussian distribution
Heating
relaxation currents
Silicon
Strain
Temperature dependence
Traps
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Summary:The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2010.5649094