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Temperature dependence of capture coefficients in trapping phenomena
The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature depe...
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creator | Lepadatu, Ana-Maria Stavarache, Ionel Lazanu, Sorina Iancu, Vladimir Mitroi, Mihai Razvan Nigmatulin, Raoul Rashid Ciurea, Magdalena Lidia |
description | The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results. |
doi_str_mv | 10.1109/SMICND.2010.5649094 |
format | conference_proceeding |
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It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.</description><subject>capture coefficients</subject><subject>Electron traps</subject><subject>Gaussian distribution</subject><subject>Heating</subject><subject>relaxation currents</subject><subject>Silicon</subject><subject>Strain</subject><subject>Temperature dependence</subject><subject>Traps</subject><issn>1545-827X</issn><issn>2377-0678</issn><isbn>9781424457830</isbn><isbn>1424457831</isbn><isbn>9781424457823</isbn><isbn>1424457823</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpVkM1OwzAQhM2fRFX6BL3kBVLWXjvrHFELpVKBA0XiVrn2BoyoYyXhwNtTQS_MZaTvk-YwQkwlzKSE-vr5YTV_XMwUHICpdA21PhGTmqzUSmtDVuGpGCkkKqEie_bPIZyLkTTalFbR66WY9P0HHGIUqVqNxGLD-8ydG746LgJnToGT56JtCu_yL_UtN030kdPQFzEVQ-dyjumtyO-c2j0ndyUuGvfZ8-TYY_Fyd7uZ35frp-VqfrMuoyQzlA2QAyAiKXeeLSIHFaTz4HeIlQwOzc5A8BiC1JVjbwmCVWyrxjCixbGY_u1GZt7mLu5d9709foI_jD9R6Q</recordid><startdate>201010</startdate><enddate>201010</enddate><creator>Lepadatu, Ana-Maria</creator><creator>Stavarache, Ionel</creator><creator>Lazanu, Sorina</creator><creator>Iancu, Vladimir</creator><creator>Mitroi, Mihai Razvan</creator><creator>Nigmatulin, Raoul Rashid</creator><creator>Ciurea, Magdalena Lidia</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201010</creationdate><title>Temperature dependence of capture coefficients in trapping phenomena</title><author>Lepadatu, Ana-Maria ; Stavarache, Ionel ; Lazanu, Sorina ; Iancu, Vladimir ; Mitroi, Mihai Razvan ; Nigmatulin, Raoul Rashid ; Ciurea, Magdalena Lidia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-f07a0077711bce833ed2d1ac0cb3361da35b50dc3dd146aec870d82e86f5e3383</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>capture coefficients</topic><topic>Electron traps</topic><topic>Gaussian distribution</topic><topic>Heating</topic><topic>relaxation currents</topic><topic>Silicon</topic><topic>Strain</topic><topic>Temperature dependence</topic><topic>Traps</topic><toplevel>online_resources</toplevel><creatorcontrib>Lepadatu, Ana-Maria</creatorcontrib><creatorcontrib>Stavarache, Ionel</creatorcontrib><creatorcontrib>Lazanu, Sorina</creatorcontrib><creatorcontrib>Iancu, Vladimir</creatorcontrib><creatorcontrib>Mitroi, Mihai Razvan</creatorcontrib><creatorcontrib>Nigmatulin, Raoul Rashid</creatorcontrib><creatorcontrib>Ciurea, Magdalena Lidia</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore (Online service)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lepadatu, Ana-Maria</au><au>Stavarache, Ionel</au><au>Lazanu, Sorina</au><au>Iancu, Vladimir</au><au>Mitroi, Mihai Razvan</au><au>Nigmatulin, Raoul Rashid</au><au>Ciurea, Magdalena Lidia</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Temperature dependence of capture coefficients in trapping phenomena</atitle><btitle>CAS 2010 Proceedings (International Semiconductor Conference)</btitle><stitle>SMICND</stitle><date>2010-10</date><risdate>2010</risdate><volume>2</volume><spage>371</spage><epage>374</epage><pages>371-374</pages><issn>1545-827X</issn><eissn>2377-0678</eissn><isbn>9781424457830</isbn><isbn>1424457831</isbn><eisbn>9781424457823</eisbn><eisbn>1424457823</eisbn><abstract>The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.</abstract><pub>IEEE</pub><doi>10.1109/SMICND.2010.5649094</doi><tpages>4</tpages></addata></record> |
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ispartof | CAS 2010 Proceedings (International Semiconductor Conference), 2010, Vol.2, p.371-374 |
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source | IEEE Xplore All Conference Series |
subjects | capture coefficients Electron traps Gaussian distribution Heating relaxation currents Silicon Strain Temperature dependence Traps |
title | Temperature dependence of capture coefficients in trapping phenomena |
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