An industrial temperature probe based on SiC diodes

A temperature probe based on 4H-SiC Schottky diodes is proposed. These diodes have been fabricated and characterized for temperature sensor applications. A conversion circuit to 4-20mA output current for ambient to maximum (400°C) input temperature was designed and tested.

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Bibliographic Details
Main Authors: Draghici, F, Badila, M, Brezeanu, G, Rusu, I, Craciunoiu, F, Enache, I
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
high temperature sensors
industrial environment
Probes
Schottky diodes
Silicon carbide
silicon carbide (SiC)
Temperature measurement
Temperature sensors
Online Access:Request full text
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Description
Summary:A temperature probe based on 4H-SiC Schottky diodes is proposed. These diodes have been fabricated and characterized for temperature sensor applications. A conversion circuit to 4-20mA output current for ambient to maximum (400°C) input temperature was designed and tested.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2010.5650596