Layout-Related Stress Effects on Radiation-Induced Leakage Current

The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width;...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3288-3292
Main Authors: Rezzak, N, Schrimpf, R D, Alles, M L, En Xia Zhang, Fleetwood, D M, Li, Y A
Format: Article
Language:English
Subjects:
Active space distance
Channels
Charge
Devices
Dopants
Irradiation
Leakage current
mechanical stress
MOSFET off-state leakage current
MOSFETs
Oxides
Sensitivity
shallow trench isolation (STI)
sidewall doping
Stress
Stresses
total ionizing dose (TID)
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Summary:The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width; narrow devices exhibit less leakage before irradiation, but more after irradiation. These geometrical factors affect the mechanical stress in the device, which impact the dopant diffusion and activation and the charge trapping in the STI oxide. The combined effects of these layout-related phenomena affect the sensitivity to radiation-induced charge.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2083690