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Layout-Related Stress Effects on Radiation-Induced Leakage Current
The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width;...
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| Published in: | IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3288-3292 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c324t-9dbb1573a612f0b78884f30460ff90602ed9f51a1ee0fd35136b3d60086e3b3e3 |
| container_end_page | 3292 |
| container_issue | 6 |
| container_start_page | 3288 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 57 |
| creator | Rezzak, N Schrimpf, R D Alles, M L En Xia Zhang Fleetwood, D M Li, Y A |
| description | The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width; narrow devices exhibit less leakage before irradiation, but more after irradiation. These geometrical factors affect the mechanical stress in the device, which impact the dopant diffusion and activation and the charge trapping in the STI oxide. The combined effects of these layout-related phenomena affect the sensitivity to radiation-induced charge. |
| doi_str_mv | 10.1109/TNS.2010.2083690 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_5658010</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5658010</ieee_id><sourcerecordid>2769326421</sourcerecordid><originalsourceid>FETCH-LOGICAL-c324t-9dbb1573a612f0b78884f30460ff90602ed9f51a1ee0fd35136b3d60086e3b3e3</originalsourceid><addsrcrecordid>eNpdkMFLwzAUxoMoOKd3wUvBi5fOl6RJk6OOqYOisM1zSdsX6dzamaSH_fdmbHjw9Pjg9z0-foTcUphQCvpx9b6cMIiJgeJSwxkZUSFUSkWuzskIgKpUZ1pfkivv1zFmAsSIPBdm3w8hXeDGBGySZXDofTKzFuvgk75LFqZpTWj7Lp13zVBHpkDzbb4wmQ7OYReuyYU1G483pzsmny-z1fQtLT5e59OnIq05y0Kqm6qKY7iRlFmocqVUZjlkEqzVIIFho62ghiKCbbigXFa8kQBKIq848jF5OP7duf5nQB_Kbetr3GxMh_3gSypzyjLJchXR-3_ouh9cF9eVFKRmItMgIgVHqna99w5tuXPt1rh9hMqD1DJKLQ9Sy5PUWLk7VlpE_MOFFCpS_BddhXCs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1069254905</pqid></control><display><type>article</type><title>Layout-Related Stress Effects on Radiation-Induced Leakage Current</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Rezzak, N ; Schrimpf, R D ; Alles, M L ; En Xia Zhang ; Fleetwood, D M ; Li, Y A</creator><creatorcontrib>Rezzak, N ; Schrimpf, R D ; Alles, M L ; En Xia Zhang ; Fleetwood, D M ; Li, Y A</creatorcontrib><description>The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width; narrow devices exhibit less leakage before irradiation, but more after irradiation. These geometrical factors affect the mechanical stress in the device, which impact the dopant diffusion and activation and the charge trapping in the STI oxide. The combined effects of these layout-related phenomena affect the sensitivity to radiation-induced charge.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2010.2083690</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active space distance ; Channels ; Charge ; Devices ; Dopants ; Irradiation ; Leakage current ; mechanical stress ; MOSFET off-state leakage current ; MOSFETs ; Oxides ; Sensitivity ; shallow trench isolation (STI) ; sidewall doping ; Stress ; Stresses ; total ionizing dose (TID)</subject><ispartof>IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3288-3292</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-9dbb1573a612f0b78884f30460ff90602ed9f51a1ee0fd35136b3d60086e3b3e3</citedby><cites>FETCH-LOGICAL-c324t-9dbb1573a612f0b78884f30460ff90602ed9f51a1ee0fd35136b3d60086e3b3e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5658010$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,54795</link.rule.ids></links><search><creatorcontrib>Rezzak, N</creatorcontrib><creatorcontrib>Schrimpf, R D</creatorcontrib><creatorcontrib>Alles, M L</creatorcontrib><creatorcontrib>En Xia Zhang</creatorcontrib><creatorcontrib>Fleetwood, D M</creatorcontrib><creatorcontrib>Li, Y A</creatorcontrib><title>Layout-Related Stress Effects on Radiation-Induced Leakage Current</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width; narrow devices exhibit less leakage before irradiation, but more after irradiation. These geometrical factors affect the mechanical stress in the device, which impact the dopant diffusion and activation and the charge trapping in the STI oxide. The combined effects of these layout-related phenomena affect the sensitivity to radiation-induced charge.</description><subject>Active space distance</subject><subject>Channels</subject><subject>Charge</subject><subject>Devices</subject><subject>Dopants</subject><subject>Irradiation</subject><subject>Leakage current</subject><subject>mechanical stress</subject><subject>MOSFET off-state leakage current</subject><subject>MOSFETs</subject><subject>Oxides</subject><subject>Sensitivity</subject><subject>shallow trench isolation (STI)</subject><subject>sidewall doping</subject><subject>Stress</subject><subject>Stresses</subject><subject>total ionizing dose (TID)</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpdkMFLwzAUxoMoOKd3wUvBi5fOl6RJk6OOqYOisM1zSdsX6dzamaSH_fdmbHjw9Pjg9z0-foTcUphQCvpx9b6cMIiJgeJSwxkZUSFUSkWuzskIgKpUZ1pfkivv1zFmAsSIPBdm3w8hXeDGBGySZXDofTKzFuvgk75LFqZpTWj7Lp13zVBHpkDzbb4wmQ7OYReuyYU1G483pzsmny-z1fQtLT5e59OnIq05y0Kqm6qKY7iRlFmocqVUZjlkEqzVIIFho62ghiKCbbigXFa8kQBKIq848jF5OP7duf5nQB_Kbetr3GxMh_3gSypzyjLJchXR-3_ouh9cF9eVFKRmItMgIgVHqna99w5tuXPt1rh9hMqD1DJKLQ9Sy5PUWLk7VlpE_MOFFCpS_BddhXCs</recordid><startdate>201012</startdate><enddate>201012</enddate><creator>Rezzak, N</creator><creator>Schrimpf, R D</creator><creator>Alles, M L</creator><creator>En Xia Zhang</creator><creator>Fleetwood, D M</creator><creator>Li, Y A</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>201012</creationdate><title>Layout-Related Stress Effects on Radiation-Induced Leakage Current</title><author>Rezzak, N ; Schrimpf, R D ; Alles, M L ; En Xia Zhang ; Fleetwood, D M ; Li, Y A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-9dbb1573a612f0b78884f30460ff90602ed9f51a1ee0fd35136b3d60086e3b3e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Active space distance</topic><topic>Channels</topic><topic>Charge</topic><topic>Devices</topic><topic>Dopants</topic><topic>Irradiation</topic><topic>Leakage current</topic><topic>mechanical stress</topic><topic>MOSFET off-state leakage current</topic><topic>MOSFETs</topic><topic>Oxides</topic><topic>Sensitivity</topic><topic>shallow trench isolation (STI)</topic><topic>sidewall doping</topic><topic>Stress</topic><topic>Stresses</topic><topic>total ionizing dose (TID)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rezzak, N</creatorcontrib><creatorcontrib>Schrimpf, R D</creatorcontrib><creatorcontrib>Alles, M L</creatorcontrib><creatorcontrib>En Xia Zhang</creatorcontrib><creatorcontrib>Fleetwood, D M</creatorcontrib><creatorcontrib>Li, Y A</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rezzak, N</au><au>Schrimpf, R D</au><au>Alles, M L</au><au>En Xia Zhang</au><au>Fleetwood, D M</au><au>Li, Y A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Layout-Related Stress Effects on Radiation-Induced Leakage Current</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2010-12</date><risdate>2010</risdate><volume>57</volume><issue>6</issue><spage>3288</spage><epage>3292</epage><pages>3288-3292</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width; narrow devices exhibit less leakage before irradiation, but more after irradiation. These geometrical factors affect the mechanical stress in the device, which impact the dopant diffusion and activation and the charge trapping in the STI oxide. The combined effects of these layout-related phenomena affect the sensitivity to radiation-induced charge.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2010.2083690</doi><tpages>5</tpages></addata></record> |
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| ispartof | IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3288-3292 |
| issn | 0018-9499 1558-1578 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Journals |
| subjects | Active space distance Channels Charge Devices Dopants Irradiation Leakage current mechanical stress MOSFET off-state leakage current MOSFETs Oxides Sensitivity shallow trench isolation (STI) sidewall doping Stress Stresses total ionizing dose (TID) |
| title | Layout-Related Stress Effects on Radiation-Induced Leakage Current |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T13%3A29%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Layout-Related%20Stress%20Effects%20on%20Radiation-Induced%20Leakage%20Current&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Rezzak,%20N&rft.date=2010-12&rft.volume=57&rft.issue=6&rft.spage=3288&rft.epage=3292&rft.pages=3288-3292&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2010.2083690&rft_dat=%3Cproquest_ieee_%3E2769326421%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c324t-9dbb1573a612f0b78884f30460ff90602ed9f51a1ee0fd35136b3d60086e3b3e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1069254905&rft_id=info:pmid/&rft_ieee_id=5658010&rfr_iscdi=true |