Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits

Space applications using advanced foundry processes require device models that accurately include the dependence of total-ionizing dose (TID) response on process variability and layout. An automated flow is described for TID-aware process design kit generation using new test chips, modeling, and sim...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3570-3574
Main Authors: Yanfeng Li, Rezzak, N, En Xia Zhang, Schrimpf, Ronald D, Fleetwood, Daniel M, Jingqiu Wang, Donglin Wang, Yanjun Wu, Shuang Cai
Format: Article
Language:English
Subjects:
Computer simulation
Devices
Foundries
Leakage current
Mathematical models
Mismatch
Process design
process design kit
process variability
Radiation effects
Semiconductor devices
Space applications
Stress
TID
Transistors
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Summary:Space applications using advanced foundry processes require device models that accurately include the dependence of total-ionizing dose (TID) response on process variability and layout. An automated flow is described for TID-aware process design kit generation using new test chips, modeling, and simulation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2086478