DC Characterization of Tunnel Diodes Under Stable Non-Oscillatory Circuit Conditions

A common problem in designing with Esaki tunneling diodes in circuits is parasitic oscillations, which occur when these devices are biased in their negative differential resistance (NDR) region. Because of this, the measured current-voltage (I-V) characteristics in the NDR region are usually incorre...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-02, Vol.58 (2), p.343-347
Main Authors: Liquan Wang, Figueiredo, J M L, Ironside, C N, Wasige, E
Format: Article
Language:English
Subjects:
Applied sciences
Circuit design
Circuit stability
Circuits
Devices
Dielectric, amorphous and glass solid devices
Diodes
Direct current
Electric potential
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Mathematical analysis
Oscillations
Oscillators
Parasitic oscillations
Resistors
Resonant tunneling devices
resonant tunneling diode (RTD)
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
tunnel diode
Tunnel diodes
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Summary:A common problem in designing with Esaki tunneling diodes in circuits is parasitic oscillations, which occur when these devices are biased in their negative differential resistance (NDR) region. Because of this, the measured current-voltage (I-V) characteristics in the NDR region are usually incorrect, with sudden changes in current with voltage and a plateaulike waveform in this region. Using a full nonlinear analysis of the shunt-resistor-stabilized tunnel diode circuit, we have established the criteria for the range of element values that give stable operation. On this basis, I-V measurement circuits can be designed to be free from both low-frequency bias oscillations and high-frequency oscillations. The design equations lead to a direct I-V measurement setup in which the stabilization resistor in series with a capacitor can be employed. Experimental results validate the approach, and this is confirmed by second-derivative analysis (d 2 I/dV 2 ) of the measured I-V characteristics.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2091507