A 1.8V to 10V CMOS level shifter for RFID transponders

A 1.8 V-to-10 V high-voltage tolerant level shifter (HVT level shifter) is presented in this paper. This new topology of HVT level shifter makes all the transistors working in safe operating region, and consequently greatly enhances the circuit's reliability. It has been fabricated in 0.18 μm C...

Full description

Saved in:
Bibliographic Details
Main Authors: Junhua Liu, Le Ye, Zhixin Deng, Jinshu Zhao, Huailin Liao
Format: Conference Proceeding
Language:English
Subjects:
EPROM
Logic gates
Programming
Radiofrequency identification
Reliability
Topology
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A 1.8 V-to-10 V high-voltage tolerant level shifter (HVT level shifter) is presented in this paper. This new topology of HVT level shifter makes all the transistors working in safe operating region, and consequently greatly enhances the circuit's reliability. It has been fabricated in 0.18 μm CMOS process, and successfully integrated in an embedded EEPROM memory with 10 V programming/erasing voltages in the passive UHF RFID transponders.
DOI:10.1109/ICSICT.2010.5667367