Including the effects of process-related variability on radiation response using a new test chip

Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leak...

Full description

Saved in:
Bibliographic Details
Main Authors: Yanfeng Li, Rezzak, N, Schrimpf, R D, Fleetwood, D M, Enxia Zhang, Yanjun Wu, Shuang Cai, Jingqiu Wang, Donglin Wang
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Current measurement
Layout
Leakage current
Logic gates
Mismatch
Process Design Kit
Process Variability
Radiation effects
Stress
TID
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.
DOI:10.1109/ICSICT.2010.5667408