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Including the effects of process-related variability on radiation response using a new test chip
Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leak...
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| creator | Yanfeng Li Rezzak, N Schrimpf, R D Fleetwood, D M Enxia Zhang Yanjun Wu Shuang Cai Jingqiu Wang Donglin Wang |
| description | Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation. |
| doi_str_mv | 10.1109/ICSICT.2010.5667408 |
| format | conference_proceeding |
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A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2010.5667408</doi><tpages>3</tpages></addata></record> |
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| identifier | ISBN: 9781424457977 |
| ispartof | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.1636-1638 |
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| language | eng |
| recordid | cdi_ieee_primary_5667408 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Arrays Current measurement Layout Leakage current Logic gates Mismatch Process Design Kit Process Variability Radiation effects Stress TID Transistors |
| title | Including the effects of process-related variability on radiation response using a new test chip |
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