A high performance, low complexity 14V Complementary BiCMOS process built on bulk silicon

This paper details a new 14V Complementary BiCMOS (CBiCMOS) addition to the TowerJazz SBC35 family of BiCMOS technologies. The SBC35 family previously supported BV ceo values up to 6V. The bipolar architecture is nearly identical with that used in the lower voltage technologies, leveraging 10 years...

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Bibliographic Details
Main Authors: Thibeault, T, Preisler, E, Jie Zheng, Lynn Lao, Hurwitz, P, Racanelli, M
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
CMOS integrated circuits
Complementary BiCMOS technology
DSL driver application
Implants
Optimization
Performance evaluation
SiGe NPN
Silicon
Silicon germanium
silicon VPNP
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Summary:This paper details a new 14V Complementary BiCMOS (CBiCMOS) addition to the TowerJazz SBC35 family of BiCMOS technologies. The SBC35 family previously supported BV ceo values up to 6V. The bipolar architecture is nearly identical with that used in the lower voltage technologies, leveraging 10 years of manufacturing history. The complementary bipolar transistors are paired with 5V CMOS currently available in our SBC35 family. This technology offers high RF performance 14V NPN transistors and PNP transistors with low process complexity. The paper describes a simplified process flow, results of optimization, and a demonstration of the key device performance metrics.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2010.5667972