Characterization for novel non-traditional CMOS inverter composed of a junctionless NMOSFET and a gated N+-N−-P transistor

We present a non-traditional CMOS inverter composed a junctionless (JL) NMOSFET and an N + -N - -P transistor which with simple process and high integration density in this paper. In the non-traditional CMOS inverter the JL NMOSFET serves as driver and the N + -N - -P transistor serves as load, resp...

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Bibliographic Details
Main Authors: Kuan-Yu Lu, Jyi-Tsong Lin, Hsuan-Hsu Chen, Yi-Chuen Eng, Chih-Hsuan Tai, Cheng-Hsin Chen, Yu-Che Chang, Yi-Hsuan Fan
Format: Conference Proceeding
Language:English
Subjects:
CMOS
Inverter
Inverters
Junctionless
Lithography
Logic gates
Metals
MOSFET circuits
MOSFETs
Silicon
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Summary:We present a non-traditional CMOS inverter composed a junctionless (JL) NMOSFET and an N + -N - -P transistor which with simple process and high integration density in this paper. In the non-traditional CMOS inverter the JL NMOSFET serves as driver and the N + -N - -P transistor serves as load, respectively. Based on the measurement date of the N + -N - -P transistor published, we draw the load line of the non-traditional CMOS inverter and we found out that the N + -N - -P transistor can be used in the COMS circuit to advance the issues of the conventional CMOS today. Besides, the area reduced more than 46.1% are also be achieved.
ISSN:2378-8593
DOI:10.1109/ISNE.2010.5669150