Low voltage low power neuron circuit design based on subthreshold FGMOS transistors and XOR implementation

In this work, design of low-voltage low-power analog artificial neural network (ANN) circuit blocks by using subthreshold floating-gate MOS (FGMOS) transistors and a neuron circuit is implemented. The circuit blocks, four-quadrant analog current multiplier and FGMOS based differential pair, have bee...

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Bibliographic Details
Main Authors: Keleş, Fatih, Yildirim, Tülay
Format: Conference Proceeding
Language:English
Subjects:
Artificial neural networks
FGMOS transistors
hardware implementations
Integrated circuit modeling
Logic gates
low power
Low voltage
neural network
Neuron circuits
Neurons
Numerical models
subthreshold
Transistors
XOR
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Summary:In this work, design of low-voltage low-power analog artificial neural network (ANN) circuit blocks by using subthreshold floating-gate MOS (FGMOS) transistors and a neuron circuit is implemented. The circuit blocks, four-quadrant analog current multiplier and FGMOS based differential pair, have been designed and simulated in CADENCE environment with TSMC 0.35μm process parameters. Using the proposed neuron circuits a neural network was realized. XOR problem was applied to test accuracy of the network and the results were concluded.
DOI:10.1109/SM2ACD.2010.5672347