Multibit Operation of Cu/Cu-GeTe/W Resistive Memory Device Controlled by Pulse Voltage Magnitude and Width

We report the demonstration of multilevel operation using Cu/Cu-GeTe/W nonvolatile resistive memory devices for enhanced storage density. We incorporated Cu atoms into GeTe solid-electrolyte switching layers in Cu/Cu-GeTe/W nonvolatile resistive memory devices by applying a bias to the sample holder...

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Bibliographic Details
Published in:IEEE electron device letters 2011-03, Vol.32 (3), p.375-377
Main Authors: CHOI, Sang-Jun, KIM, Ki-Hong, PARK, Gyeong-Su, BAE, Hyung-Jin, YANG, Woo-Young, CHO, Soohaeng
Format: Article
Language:English
Subjects:
Applied sciences
Bridge circuits
Copper
Current measurement
Data storage
Density
Design. Technologies. Operation analysis. Testing
Devices
Electric potential
Electrodes
Electronics
Exact sciences and technology
GeTe
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Memory devices
multibit operation
Multilevel
nonvolatile
Resistance
resistive switching memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
solid electrolyte
Storage and reproduction of information
Switches
Voltage
Voltage measurement
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Summary:We report the demonstration of multilevel operation using Cu/Cu-GeTe/W nonvolatile resistive memory devices for enhanced storage density. We incorporated Cu atoms into GeTe solid-electrolyte switching layers in Cu/Cu-GeTe/W nonvolatile resistive memory devices by applying a bias to the sample holder during a radio-frequency sputtering process. By analyzing the dependence of the device current (resistance) on both the pulse input voltage magnitude and width, we achieved four distinct resistance levels that correspond to the 2-bit operation of a single memory cell. Moreover, a model was suggested and discussed to account for the observed multibit operation.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2097236