Cluster-free B-doped a-Si:H films deposited using SiH4 + B10H14 multi-hollow discharges

We have deposited cluster-free B-doped a-Si:H films using a SiH 4 +B 10 H 14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R = [B 10 H 14 ]/[SiH 4 ] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increa...

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Main Authors: Nakahara, Kenta, Kawashima, Yuki, Sato, Muneharu, Matsunaga, Takeaki, Yamamoto, Kousuke, Nakamura, William Makoto, Yamashita, Daisuke, Matsuzaki, Hidefumi, Uchida, Giichiro, Itagaki, Naho, Koga, Kazunori, Shiratani, Masaharu
Format: Conference Proceeding
Language:English
Subjects:
amorphous silicon
decaborane
Discharges
multi-hollow discharges
Optical films
Optical variables measurement
Plasmas
Silicon
Stimulated emission
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Summary:We have deposited cluster-free B-doped a-Si:H films using a SiH 4 +B 10 H 14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R = [B 10 H 14 ]/[SiH 4 ] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8 nm/s R = 0.0 % to 2.2 nm/s for R = 0.53%, but SiH emission intensity is almost constant for R = 0 - 2.0%. These results suggest B x H y radicals enhance surface reaction probability of SiH 3 radicals. The optical bandgap of films is around 1.9 eV, being larger than that of conventional B-doped films.
ISSN:2159-3442
2159-3450
DOI:10.1109/TENCON.2010.5686686