Coaxial tip piezoresistive scanning probes with sub-nanometer vertical displacement resolution

We present the design and fabrication of an improved probe for scanning gate microscopy (SGM). Like our previously reported design, the new probe integrates a coaxial tip to produce highly localized electric fields and a piezoresistor to self-sense tip deflection. However, the new design achieves a...

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Bibliographic Details
Main Authors: Harjee, Nahid, Haemmerli, Alexandre, Goldhaber-Gordon, David, Pruitt, Beth L
Format: Conference Proceeding
Language:English
Subjects:
Leg
Noise
Piezoresistance
Probes
Resists
Sensitivity
Silicon
Online Access:Request full text
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Summary:We present the design and fabrication of an improved probe for scanning gate microscopy (SGM). Like our previously reported design, the new probe integrates a coaxial tip to produce highly localized electric fields and a piezoresistor to self-sense tip deflection. However, the new design achieves a vertical displacement resolution of 3.7 Å in a 10 kHz bandwidth, enabling the study of both topography and electron organization of semiconductor nanostructures with sub-nanometer features. The design is based on a numerical optimizer for force-sensing piezoresistive cantilevers, which we have extended for SGM.
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2010.5689882