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Built-In Self-Test for Capacitive MEMS Using a Charge Control Technique
A new Built-in Self-Test (BIST) method for capacitive Micro-Electrical-Mechanical System (MEMS) devices using charge-control method has been developed in which the Device Under Test (DUT) is stimulated through current sources. The DUT output signals are first converted to time domain intervals and t...
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creator | Basith, I I Kandalaft, N Rashidzadeh, R |
description | A new Built-in Self-Test (BIST) method for capacitive Micro-Electrical-Mechanical System (MEMS) devices using charge-control method has been developed in which the Device Under Test (DUT) is stimulated through current sources. The DUT output signals are first converted to time domain intervals and then measured through a precision Time-to-Digital converter (TDC). The proposed BIST scheme supports self-calibration and produces robust results under process, supply and temperature variations. Simulation results indicate that this method can successfully detect minor structural defects altering the MEMS nominal capacitance by 70af. |
doi_str_mv | 10.1109/ATS.2010.32 |
format | conference_proceeding |
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The DUT output signals are first converted to time domain intervals and then measured through a precision Time-to-Digital converter (TDC). The proposed BIST scheme supports self-calibration and produces robust results under process, supply and temperature variations. Simulation results indicate that this method can successfully detect minor structural defects altering the MEMS nominal capacitance by 70af.</description><subject>Built-in self-test</subject><subject>Calibration</subject><subject>Capacitance</subject><subject>Capacitors</subject><subject>Delay</subject><subject>Delay lines</subject><subject>device under test</subject><subject>Micromechanical devices</subject><subject>test for MEMS</subject><subject>time-to-digital converter</subject><issn>1081-7735</issn><issn>2377-5386</issn><isbn>1424488419</isbn><isbn>9781424488414</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotjLtOwzAUQC0eEqV0YmTxD7j4fe2xRKVUasWQdK4s57o1CklJUiT-nkpwlqOzHEIeBZ8Lwf3zoirnkl9KySsykQqAGeXsNbkXWmrtnBb-hkwEd4IBKHNHZsPwwS8YCRpgQlYv59yMbN3SEpvEKhxGmrqeFuEUYh7zN9LtclvS3ZDbAw20OIb-gLTo2rHvGlphPLb564wP5DaFZsDZv6dk97qsije2eV-ti8WGZQFmZCbyVKtkUPDIReTe1gjcKi-jri245LmqNRovbe0cCBVq7aMCbqJ33ic1JU9_34yI-1OfP0P_szfWS6ms-gWtb0pp</recordid><startdate>201012</startdate><enddate>201012</enddate><creator>Basith, I I</creator><creator>Kandalaft, N</creator><creator>Rashidzadeh, R</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201012</creationdate><title>Built-In Self-Test for Capacitive MEMS Using a Charge Control Technique</title><author>Basith, I I ; Kandalaft, N ; Rashidzadeh, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-5c0fd3f5e10c01c096de706392c4d678f903d4e5926d88713ad49c3705c9899f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Built-in self-test</topic><topic>Calibration</topic><topic>Capacitance</topic><topic>Capacitors</topic><topic>Delay</topic><topic>Delay lines</topic><topic>device under test</topic><topic>Micromechanical devices</topic><topic>test for MEMS</topic><topic>time-to-digital converter</topic><toplevel>online_resources</toplevel><creatorcontrib>Basith, I I</creatorcontrib><creatorcontrib>Kandalaft, N</creatorcontrib><creatorcontrib>Rashidzadeh, R</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Basith, I I</au><au>Kandalaft, N</au><au>Rashidzadeh, R</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Built-In Self-Test for Capacitive MEMS Using a Charge Control Technique</atitle><btitle>2010 19th IEEE Asian Test Symposium</btitle><stitle>ats</stitle><date>2010-12</date><risdate>2010</risdate><spage>135</spage><epage>140</epage><pages>135-140</pages><issn>1081-7735</issn><eissn>2377-5386</eissn><isbn>1424488419</isbn><isbn>9781424488414</isbn><abstract>A new Built-in Self-Test (BIST) method for capacitive Micro-Electrical-Mechanical System (MEMS) devices using charge-control method has been developed in which the Device Under Test (DUT) is stimulated through current sources. 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ispartof | 2010 19th IEEE Asian Test Symposium, 2010, p.135-140 |
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source | IEEE Xplore All Conference Series |
subjects | Built-in self-test Calibration Capacitance Capacitors Delay Delay lines device under test Micromechanical devices test for MEMS time-to-digital converter |
title | Built-In Self-Test for Capacitive MEMS Using a Charge Control Technique |
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